Si7157DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g d 0.0016 at V = - 10 V - 60 GS Material categorization: For definitions of compliance please see d - 20 0.0020 at V = - 4.5 V 202.5 nC - 60 GS www.vishay.com/doc 99912 d 0.0032 at V = - 2.5 V - 60 GS APPLICATIONS PowerPAK SO-8 S For Mobile Computing - Adaptor Switch S 6.15 mm 5.15 mm - Battery Switch 1 S 2 - Load Switch G S 3 - Power Management G 4 D 8 D 7 D 6 D D 5 Bottom View P-Channel MOSFET Ordering Information: Si7157DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 12 GS d T = 25 C - 60 C d T = 70 C - 60 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 46.5 A a, b T = 70 C - 37.2 A A Pulsed Drain Current (t = 100 s) I - 300 p DM d T = 25 C - 60 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 5.6 A Avalanche Current I - 35 AS L = 0.1 mH Single-Pulse Avalanche Energy E 61.25 mJ AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D a, b T = 25 C 6.25 A a, b T = 70 C 4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C e, f Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 15 20 thJA C/W R Maximum Junction-to-Case Steady State 0.9 1.2 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 54 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 62860 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1665-Rev. A, 29-Jul-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7157DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 14.5 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.1 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.5 - 1.4 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 40 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 25 A 0.00125 0.00160 GS D a R V = - 4.5 V, I = - 20 A 0.00155 0.00200 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 15 A 0.00240 0.00320 GS D a g V = - 10 V, I = - 25 A 120 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 22 000 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 2470 pF oss DS GS C Reverse Transfer Capacitance 2515 rss V = - 10 V, V = - 10 V, I = - 20 A 415 625 DS GS D Q Total Gate Charge g 202.5 305 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 20 A 32.5 gs DS GS D Q Gate-Drain Charge 51.5 gd R Gate Resistance f = 1 MHz 0.8 1.5 2.5 g t Turn-On Delay Time 20 40 d(on) t Rise Time V = - 10 V, R = 1 14 28 r DD L I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime t 220 400 D GEN g d(off) t Fall Time 55 110 f ns Turn-On Delay Time t 115 200 d(on) t Rise Time V = - 10 V, R = 1 120 220 r DD L I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 230 390 D GEN g d(off) t Fall Time 75 150 f Drain-Source Body Diode Characteristics T = 25 C - 60 Continous Source-Drain Diode Current I S C A Pulse Diode Forward Current (t = 100 s) I - 300 p SM I = - 5 A, V = 0 V - 0.64 - 1.1 V Body Diode Voltage V SD S GS Body Diode Reverse Recovery Time t 88 140 ns rr 120 200 nC Body Diode Reverse Recovery Charge Q rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J 31 Reverse Recovery Fall Time t a ns 57 Reverse Recovery Rise Time t b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62860 2 S13-1665-Rev. A, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000