New Product Si7190DP Vishay Siliconix N-Channel 250-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 g V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.118 at V = 10 V 18.4 GS TrenchFET Power MOSFET 250 32 0.124 at V = 6 V 18.0 GS Low Thermal Resistance PowerPAK Package 100 % R Tested g PowerPAK SO-8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 D S Primary Side Switch 3 G Industrial 4 POL D 8 D 7 G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: Si7190DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 250 DS V Gate-Source Voltage V 20 GS T = 25 C 18.4 C T = 70 C 14.7 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 4.4 b, c T = 70 C A 3.5 A Pulsed Drain Current I 30 DM a T = 25 C C 30 Continuous Source-Drain Diode Current I S b, c T = 25 C A 4.5 Avalanche Current I 7 AS L = 0.1 mH Single-Pulse Avalanche Energy E 2.4 mJ AS T = 25 C 96 C T = 70 C 61.5 C Maximum Power Dissipation P W D b, c T = 25 C A 5.4 b, c T = 70 C A 3.5 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 18 23 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.0 1.3 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. g. Based on T = 25 C. C Document Number: 68985 www.vishay.com S09-0997-Rev. B, 01-Jun-09 1New Product Si7190DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 250 V DS GS D V Temperature Coefficient V /T 258 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 9.8 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 24V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 250 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 250 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.4 A 0.098 0.118 GS D a R Drain-Source On-State Resistance DS(on) V = 6 V, I = 4.3 A 0.103 0.124 GS D a g V = 15 V, I = 4.4 A 19 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 2214 iss C V = 125 V, V = 0 V, f = 1 MHz Output Capacitance 96 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = 125 V, V = 10 V, I = 4.4 A 48 72 DS GS D Q Total Gate Charge g 32 48 nC Q Gate-Source Charge V = 125 V, V = 6 V, I = 4.4 A 12 gs DS GS D Q Gate-Drain Charge 15 gd R Gate Resistance f = 1 MHz 0.2 0.9 1.8 g t Turn-On Delay Time 21 32 d(on) t Rise Time V = 125 V, R = 35.7 14 21 r DD L I 3.5 A, V = 6 V, R = 1 Turn-Off Delay Time t 24 36 D GEN g d(off) t Fall Time 10 20 f ns Turn-On Delay Time t 13 20 d(on) t Rise Time V = 125 V, R = 35.7 12 18 r DD L I 3.5 A, V = 10 V, R = 1 Turn-Off Delay Time t 28 42 D GEN g d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 30 S C A a I 30 Pulse Diode Forward Current SM V I = 3.5 A Body Diode Voltage 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 87 131 ns rr Q Body Diode Reverse Recovery Charge 300 450 nC rr I = 3.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 62 a ns t Reverse Recovery Rise Time 25 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68985 2 S09-0997-Rev. B, 01-Jun-09