Si7216DN Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) Available DS DS(on) D g e TrenchFET Power MOSFET 0.032 at V = 10 V 6 GS 40 5.5 nC Low Thermal Resistance PowerPAK e 0.039 at V = 4.5 V GS 5 Package with Small Size and Low 1.07 mm Profile 100 % R and UIS tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch Synchronus Rectification PowerPAK 1212-8 D D 1 2 S1 3.30 mm 3.30 mm 1 G1 2 S2 3 G2 4 D1 G G 8 1 2 D1 7 D2 Bottom View 6 D2 5 S S 1 2 Ordering Information: Si7216DN-T1-E3 (Lead (Pb)-free) Si7216DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V 40 Drain-Source Voltage DS V V 20 Gate-Source Voltage GS e T = 25 C 6 C e T = 70 C 5 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 6.5 a, b T = 70 C A 5.2 A I Pulsed Drain Current 20 DM e T = 25 C 6 C I Continuous Source-Drain Diode Current S a, b T = 25 C A 2 I Avalanche Current 10 AS L = 0.1 mH Single-Pulse Avalanche Energy E 5mJ AS T = 25 C 20.8 C T = 70 C 13.3 C Maximum Power Dissipation P W D a, b T = 25 C 2.5 A a, b T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73771 www.vishay.com S11-1142-Rev. C, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7216DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b t 10 s R 38 50 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 4.5 6 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 94 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V /T V Temperature Coefficient 43 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.8 GS(th) J GS(th) Gate-Source Threshold Voltage V V = V , I = 250 A 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 10 A D(on) DS GS V 10 V, I = 5 A 0.025 0.032 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 4 A 0.031 0.039 GS D a Forward Transconductance g V = 15 V, I = 5 A 25 S fs DS D b Dynamic C Input Capacitance 670 iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz 90 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = 20 V, V = 10 V, I = 5 A 12.5 19 DS GS D Total Gate Charge Q g 5.5 8.5 nC Q Gate-Source Charge V = 20 V, V = 4.5 V, I = 5 A 2 gs DS GS D Q Gate-Drain Charge 2 gd R Gate Resistance f = 1 MHz 3.4 5.1 g t Turn-On Delay Time 16 25 d(on) t Rise Time V = 20 V, R = 4 142 215 r DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 25 d(off) t Fall Time 712 f ns t Turn-On Delay Time 915 d(on) Rise Time t 57 90 V = 20 V, R = 4 r DD L I 5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 19 30 d(off) Fall Time t 510 f www.vishay.com Document Number: 73771 2 S11-1142-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000