X-On Electronics has gained recognition as a prominent supplier of SI7216DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7216DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7216DN-T1-GE3 Vishay

SI7216DN-T1-GE3 electronic component of Vishay
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Part No.SI7216DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Dual N-Ch MOSFET 40V 32mohm @ 10V
Datasheet: SI7216DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.6435 ea
Line Total: USD 1930.5 
Availability - 2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6435
6000 : USD 0.6435
9000 : USD 0.6435

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.767

   
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We are delighted to provide the SI7216DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7216DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si7216DN Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) Available DS DS(on) D g e TrenchFET Power MOSFET 0.032 at V = 10 V 6 GS 40 5.5 nC Low Thermal Resistance PowerPAK e 0.039 at V = 4.5 V GS 5 Package with Small Size and Low 1.07 mm Profile 100 % R and UIS tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch Synchronus Rectification PowerPAK 1212-8 D D 1 2 S1 3.30 mm 3.30 mm 1 G1 2 S2 3 G2 4 D1 G G 8 1 2 D1 7 D2 Bottom View 6 D2 5 S S 1 2 Ordering Information: Si7216DN-T1-E3 (Lead (Pb)-free) Si7216DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V 40 Drain-Source Voltage DS V V 20 Gate-Source Voltage GS e T = 25 C 6 C e T = 70 C 5 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 6.5 a, b T = 70 C A 5.2 A I Pulsed Drain Current 20 DM e T = 25 C 6 C I Continuous Source-Drain Diode Current S a, b T = 25 C A 2 I Avalanche Current 10 AS L = 0.1 mH Single-Pulse Avalanche Energy E 5mJ AS T = 25 C 20.8 C T = 70 C 13.3 C Maximum Power Dissipation P W D a, b T = 25 C 2.5 A a, b T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73771 www.vishay.com S11-1142-Rev. C, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7216DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b t 10 s R 38 50 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 4.5 6 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 94 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V /T V Temperature Coefficient 43 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.8 GS(th) J GS(th) Gate-Source Threshold Voltage V V = V , I = 250 A 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 10 A D(on) DS GS V 10 V, I = 5 A 0.025 0.032 GS D a R Drain-Source On-State Resistance DS(on) V 4.5 V, I = 4 A 0.031 0.039 GS D a Forward Transconductance g V = 15 V, I = 5 A 25 S fs DS D b Dynamic C Input Capacitance 670 iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz 90 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = 20 V, V = 10 V, I = 5 A 12.5 19 DS GS D Total Gate Charge Q g 5.5 8.5 nC Q Gate-Source Charge V = 20 V, V = 4.5 V, I = 5 A 2 gs DS GS D Q Gate-Drain Charge 2 gd R Gate Resistance f = 1 MHz 3.4 5.1 g t Turn-On Delay Time 16 25 d(on) t Rise Time V = 20 V, R = 4 142 215 r DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 25 d(off) t Fall Time 712 f ns t Turn-On Delay Time 915 d(on) Rise Time t 57 90 V = 20 V, R = 4 r DD L I 5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 19 30 d(off) Fall Time t 510 f www.vishay.com Document Number: 73771 2 S11-1142-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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