X-On Electronics has gained recognition as a prominent supplier of SI7232DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7232DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7232DN-T1-GE3 Vishay

SI7232DN-T1-GE3 electronic component of Vishay
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Part No.SI7232DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 25A 23W 16.4mohm @ 4.5V
Datasheet: SI7232DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.3681 ea
Line Total: USD 1104.3 
Availability - 5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 13
Multiples : 1
13 : USD 0.4013

5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3681
30000 : USD 0.3648

1754
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.8364
10 : USD 0.6877
30 : USD 0.6124
100 : USD 0.5388
500 : USD 0.4936
1000 : USD 0.471

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI7232DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7232DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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3.3 mm3.3 mm Si7232DN www.vishay.com Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) R ( )I (A) Q (TYP.) DS DS(on) D g Material categorization: f 0.0164 at V = 4.5 V 25 GS for definitions of compliance please see f 20 0.0200 at V = 2.5 V 25 12 nC GS www.vishay.com/doc 99912 0.0240 at V = 1.8 V 24.6 GS APPLICATIONS PowerPAK 1212-8 Dual D 1 DC/DC D 1 8 D 2 7 Notebook system power D 2 6 5 POL D D 1 2 11 22 SS 11 33 GG 11 44 SS 1 G G 22 1 2 GG 2 Top View Bottom View N-Channel MOSFET N-Channel MOSFET Ordering Information: Si7232DN-T1-GE3 (Lead (Pb)-free and halogen-free) S S 1 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS f T = 25 C 25 C T = 70 C 23.8 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 10 A a, b T = 70 C 8 A A Pulsed Drain Current I 40 DM T = 25 C 19 C Continuous Source-Drain Diode Current I S a, b T = 25 C 2.2 A Single Pulse Avalanche Current I 15 AS L = 0.1 mH Single Pulse Avalanche Energy E 11 mJ AS T = 25 C 23 C T = 70 C 14.8 C Maximum Power Dissipation P W D a, b T = 25 C 2.6 A a, b T = 70 C 1.7 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, e Maximum Junction-to-Ambient t 10 s R 38 48 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 4.3 5.4 thJC Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 94 C/W. f. Package limited. S15-0931-Rev. C, 27-Apr-15 Document Number: 68986 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm3 mmSi7232DN www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 - - V DS GS D V Temperature Coefficient V /T -22 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --3 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 - 1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 20 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 - - A D(on) DS GS V = 4.5 V, I = 10 A - 0.0135 0.0164 GS D a Drain-Source On-State Resistance R V = 2.5 V, I = 9 A - 0.0160 0.0200 DS(on) GS D V = 1.8 V, I = 8.2 A - 0.0190 0.0240 GS D a Forward Transconductance g V = 10 V, I = 10 A - 47 - S fs DS D b Dynamic Input Capacitance C - 1220 - iss Output Capacitance C -V = 10 V, V = 0 V, f = 1 MHz180- pF oss DS GS Reverse Transfer Capacitance C -80- rss V = 15 V, V = 8 V, I = 10 A - 21 32 DS GS D Total Gate Charge Q g -12 18 nC Gate-Source Charge Q -2V = 15 V, V = 4.5 V, I = 10 A - gs DS GS D Gate-Drain Charge Q -1.3 - gd Gate Resistance R f = 1 MHz - 1.8 3.6 g Turn-On Delay Time t -10 15 d(on) Rise Time t -1015 r V = 10 V, R = 1.25 DD L I 8 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -3D GEN g 555 d(off) Fall Time t -10 15 f ns Turn-On Delay Time t -10 15 d(on) Rise Time t -1015 r V = 10 V, R = 1.25 DD L I 8 A, V = 8 V, R = 1 Turn-Off Delay Time t -2D GEN g 540 d(off) Fall Time t -10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 19 S C A Pulse Diode Forward Current I -- 40 SM Body Diode Voltage V I = 8 A, V = 0 V - 0.81 1.2 V SD S GS Body Diode Reverse Recovery Time t -20 30 ns rr Body Diode Reverse Recovery Charge Q -15 25 nC rr I = 8 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t - 12.5 - a ns Reverse Recovery Rise Time t -7.5 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0931-Rev. C, 27-Apr-15 Document Number: 68986 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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