Si7309DN Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.115 at V = - 10 V - 8 GS TrenchFET Power MOSFET - 60 14.5 nC 0.146 at V = - 4.5 V - 8 GS Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile APPLICATIONS PowerPAK 1212-8 CCFL inverter Class D-amp S S 3.30 mm 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7309DN-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si7309DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 60 DS V V 20 Gate-Source Voltage GS a T = 25 C C - 8 T = 70 C - 7.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 3.9 b, c T = 70 C A - 3.1 A I - 20 Pulsed Drain Current (10 s Width) DM a T = 25 C C - 8 I Continuous Source-Drain Diode Current S b, c T = 25 C A - 2.7 I - 15 Avalanche Current AS L = 0.1 mH Single-Pulse Avalanche Energy E 11 mJ AS T = 25 C 19.8 C T = 70 C 12.7 C P Maximum Power Dissipation W D b, c T = 25 C A 3.2 b, c T = 70 C A 2.1 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d R 31 39 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 56.3 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 C/W. Document Number: 73434 www.vishay.com S-83051-Rev. B, 29-Dec-08 1Si7309DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 60 V DS GS D V Temperature Coefficient V /T - 50 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T + 3.8 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 ns GSS DS GS V = - 60 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 60 V, V = 0 V, T = 85 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.9 A 0.092 0.115 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 3.5 A 0.120 0.146 GS D a g V = - 15 V, I = - 3.9 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 600 iss Output Capacitance C V = - 30 V, V = 0 V, f = 1 MHz 70 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = - 30 V, V = - 10 V, I = - 3.9 A 14.5 22 DS GS D Q Total Gate Charge g 7.5 12 nC Q Gate-Source Charge V = - 30 V, V = - 4.5 V, I = - 3.9 A 2.2 gs DS GS D Q Gate-Drain Charge 3.7 gd R Gate Resistance f = 1 MHz 14 g t Turn-On Delay Time 25 40 d(on) t Rise Time V = - 30 V, R = 9.4 80 120 r DD L I - 3.2 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 33 50 d(off) Fall Time t 35 50 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 15 25 V = - 30 V, R = 9.4 r DD L I - 3.2 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) Fall Time t 33 50 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 8 S C A I Pulse Diode Forward Current - 20 SM V I = - 1.3 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 50 ns rr Q Body Diode Reverse Recovery Charge 32 50 nC rr I = - 1.3 A, dI/dt = - 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 17 a ns t Reverse Recovery Rise Time 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73434 2 S-83051-Rev. B, 29-Dec-08