New Product Si7328DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available e V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0066 at V = 10 V 35 GS COMPLIANT 30 21 nC Low Thermal Resistance PowerPAK 0.0076 at V = 4.5 V 35 GS Package with Small Size and Low 1.07 mm Profile 100 % R Tested g APPLICATIONS PowerPAK 1212-8 Synchronous Rectification Notebook DC/DC Converter S 3.30 mm 3.30 mm 1 S 2 S D 3 G 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7328DN-T1-E3 (Lead (Pb)-free) Si7328DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 12 GS e T = 25 C 35 C e T = 70 C C 35 Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 18.9 a, b T = 70 C A A 17.35 I Pulsed Drain Current 60 DM e T = 25 C 35 C Continuous Source-Drain Diode Current I S a, b T = 25 C A 3.15 T = 25 C 52 C T = 70 C 43 C P Maximum Power Dissipation W D a, b T = 25 C A 3.78 a, b T = 70 C A 3.18 Operating Junction and Storage Temperature Range T , T - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (New Product Si7328DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 24 33 a, b R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 81 C/W. MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 18.9 A 0.0055 0.0066 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 17.65 A 0.0063 0.0076 GS D a g V = 15 V, I = 18.9 A 97 S Forward Transconductance fs DS D V I = 3.2 A, V = 0 V Diode Forward Voltage 0.7 1.2 V SD S GS b Dynamic Input Capacitance C 2610 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 300 pF oss DS GS Reverse Transfer Capacitance C 140 rss Q Total Gate Charge 21 31.5 g Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 18.9 A 7.5 nC gs DS GS D Q Gate-Drain Charge 2.5 gd R Gate Resistance f = 1 MHz 0.5 1.2 1.8 g t Turn-On Delay Time 10 15 d(on) t Rise Time V = 15 V, R = 0.86 10 15 r DD L I 17.3 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 35 52.5 ns d(off) t Fall Time 812 f t Body Diode Reverse Recovery Time 30 60 rr I = 3.2 A, dI/dt = 100 A/s F Q Body Diode Reverse Recovery Charge 18 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73960 2 S-81005-Rev. B, 05-May-08