X-On Electronics has gained recognition as a prominent supplier of SI7489DP-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI7489DP-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI7489DP-T1-GE3 Vishay

Hot SI7489DP-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI7489DP-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
Datasheet: SI7489DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8487 ea
Line Total: USD 1.85

Availability - 1872
Ship by Wed. 14 Aug to Mon. 19 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14550
Ship by Wed. 07 Aug to Tue. 13 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 1.456

1872
Ship by Wed. 14 Aug to Mon. 19 Aug
MOQ : 1
Multiples : 1
1 : USD 1.8487
10 : USD 1.5888
30 : USD 1.4266
100 : USD 1.2589
500 : USD 1.1834
1000 : USD 1.152

76731
Ship by Tue. 13 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 2.4725
10 : USD 2.07
100 : USD 1.725
250 : USD 1.5985
500 : USD 1.495
1000 : USD 1.2995
3000 : USD 1.288
6000 : USD 1.265
9000 : USD 1.219

5820
Ship by Wed. 07 Aug to Tue. 13 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 1.4436
6000 : USD 1.4055
9000 : USD 1.3494

11640
Ship by Wed. 07 Aug to Tue. 13 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 1.7757

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI7489DP-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7489DP-T1-GE3 and other electronic components in the MOSFET category and beyond.

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The Vishay SI7489DP-T1-GE3 is an P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8. It is a strong MOSFET which provides a low RDS(on) of less than 7m? making it ideal for use in power switching applications. It features a reverse recovery time and has a 0.035V gate charge. This device is RoHs compliant and is AEC-Q101 qualified. It is also 175°C capable and has a high power and thermal dissipation for high efficiency and improved performance. The device also has low gate charge and drain-source resistance for high speed switching and low EMI. This device is perfect for load management, current sensing, AC/DC conversion, and power distribution applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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