X-On Electronics has gained recognition as a prominent supplier of SI7501DN-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7501DN-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7501DN-T1-E3 Vishay

SI7501DN-T1-E3 electronic component of Vishay
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Part No.SI7501DN-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET COMPLEMENTARY 30-V (D-S)
Datasheet: SI7501DN-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7529 ea
Line Total: USD 0.75 
Availability - 0
MOQ: 1  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 3000
1 : USD 0.7529
60 : USD 0.7336
750 : USD 0.6306

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7501DN-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7501DN-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7501DN Vishay Siliconix Complementary 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFET 0.051 at V = - 10 V - 6.4 GS P-Channel - 30 New Low Thermal Resistance RoHS 0.075 at V = - 6 V - 5.3 GS COMPLIANT PowerPAK Package with Low 1.07 mm 0.035 at V = 10 V 7.7 GS Profile N-Channel 30 0.050 at V = 4.5 V 6.5 GS APPLICATIONS Backlight Inverter PowerPAK 1212-8 DC/DC Converter S 1 - 4 Cell Battery S1 3.30 mm 3.30 mm 1 G1 2 G S2 1 3 G2 4 D D 8 D 7 D 6 G 2 D 5 Bottom View S 2 Ordering Information: Si7501DN-T1-E3 (Lead (Pb)-free) Si7501DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A P-Channel N-Channel Parameter Symbol Unit 10 s Steady State 10 s Steady State Drain-Source Voltage V - 30 30 DS V V Gate-Source Voltage 25 20 GS T = 25 C - 6.4 - 4.5 7.7 5.4 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 5.1 - 3.6 4.7 4.3 A A I 25 Pulsed Drain Current - 25 DM a I - 2.6 - 1.3 2.6 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.1 1.6 3.1 1.6 A a P W Maximum Power Dissipation D T = 70 C 31.0 21.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 32 40 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Foot (Case) Steady State 56.3 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7501DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = - 250 A P-Ch - 1.0 - 3 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = 250 A N-Ch 1.0 3 DS GS D V = 0 V, V = 25 V P-Ch 200 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V N-Ch 100 DS GS V = - 30 V, V = 0 V P-Ch - 1 DS GS V = 30 V, V = 0 V N-Ch 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V = 30 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V - 5 V, V = - 10 V P-Ch - 25 DS GS a I A On-State Drain Current D(on) V 5 V, V = 10 V N-Ch 25 DS GS V = - 10 V, I = - 6.4 A P-Ch 0.041 0.051 GS D V = 10 V, I = 7.7 A N-Ch 0.028 0.035 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 5.3 A P-Ch 0.055 0.075 GS D V = 4.5 V, I = 6.5 A N-Ch 0.040 0.050 GS D V = - 15 V, I = - 6.4 A P-Ch 13 DS D a g S Forward Transconductance fs V = 15 V, I = 7.7 A N-Ch 15 DS D I = - 1.7 A, V = 0 V P-Ch - 0.80 - 1.2 S GS a V V Diode Forward Voltage SD I = 1.7 A, V = 0 V N-Ch 0.80 1.2 S GS b Dynamic P-Ch 12.5 19 Q Total Gate Charge g P-Channel N-Ch 9 14 V = - 15 V, V = - 10 V, I = - 6.4 A DS GS D P-Ch 2.5 Q Gate-Source Charge nC gs N-Ch 2 N-Channel P-Ch 3.6 V = 15 V, V = 10 V, I = 7.7 A DS GS D Q Gate-Drain Charge gd N-Ch 1.3 P-Ch 9 R Gate Resistance g N-Ch 3 P-Ch 10 15 t Turn-On Delay Time d(on) P-Channel N-Ch 10 15 V = - 15 V, R = 5 DD L P-Ch 20 30 t Rise Time r I - 3 A, V = - 10 V, R = 1 D GEN G N-Ch 15 25 P-Ch 25 40 N-Channel t Turn-Off Delay Time d(off) ns N-Ch 20 30 V = 15 V, R = 5 DD L P-Ch 30 45 I 3 A, V = 10 V, R = 1 D GEN G t Fall Time f N-Ch 10 15 I = - 1.7 A, dI/dt = 100 A/s P-Ch 25 50 F Source-Drain Reverse Recovery Time t rr I = 1.7 A, dI/dt = 100 A/s N-Ch 20 40 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72173 2 S-81544-Rev. D, 07-Jul-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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