Si7501DN Vishay Siliconix Complementary 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFET 0.051 at V = - 10 V - 6.4 GS P-Channel - 30 New Low Thermal Resistance RoHS 0.075 at V = - 6 V - 5.3 GS COMPLIANT PowerPAK Package with Low 1.07 mm 0.035 at V = 10 V 7.7 GS Profile N-Channel 30 0.050 at V = 4.5 V 6.5 GS APPLICATIONS Backlight Inverter PowerPAK 1212-8 DC/DC Converter S 1 - 4 Cell Battery S1 3.30 mm 3.30 mm 1 G1 2 G S2 1 3 G2 4 D D 8 D 7 D 6 G 2 D 5 Bottom View S 2 Ordering Information: Si7501DN-T1-E3 (Lead (Pb)-free) Si7501DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A P-Channel N-Channel Parameter Symbol Unit 10 s Steady State 10 s Steady State Drain-Source Voltage V - 30 30 DS V V Gate-Source Voltage 25 20 GS T = 25 C - 6.4 - 4.5 7.7 5.4 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 5.1 - 3.6 4.7 4.3 A A I 25 Pulsed Drain Current - 25 DM a I - 2.6 - 1.3 2.6 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.1 1.6 3.1 1.6 A a P W Maximum Power Dissipation D T = 70 C 31.0 21.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 32 40 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Foot (Case) Steady State 56.3 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7501DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = - 250 A P-Ch - 1.0 - 3 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = 250 A N-Ch 1.0 3 DS GS D V = 0 V, V = 25 V P-Ch 200 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V N-Ch 100 DS GS V = - 30 V, V = 0 V P-Ch - 1 DS GS V = 30 V, V = 0 V N-Ch 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V = 30 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V - 5 V, V = - 10 V P-Ch - 25 DS GS a I A On-State Drain Current D(on) V 5 V, V = 10 V N-Ch 25 DS GS V = - 10 V, I = - 6.4 A P-Ch 0.041 0.051 GS D V = 10 V, I = 7.7 A N-Ch 0.028 0.035 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 5.3 A P-Ch 0.055 0.075 GS D V = 4.5 V, I = 6.5 A N-Ch 0.040 0.050 GS D V = - 15 V, I = - 6.4 A P-Ch 13 DS D a g S Forward Transconductance fs V = 15 V, I = 7.7 A N-Ch 15 DS D I = - 1.7 A, V = 0 V P-Ch - 0.80 - 1.2 S GS a V V Diode Forward Voltage SD I = 1.7 A, V = 0 V N-Ch 0.80 1.2 S GS b Dynamic P-Ch 12.5 19 Q Total Gate Charge g P-Channel N-Ch 9 14 V = - 15 V, V = - 10 V, I = - 6.4 A DS GS D P-Ch 2.5 Q Gate-Source Charge nC gs N-Ch 2 N-Channel P-Ch 3.6 V = 15 V, V = 10 V, I = 7.7 A DS GS D Q Gate-Drain Charge gd N-Ch 1.3 P-Ch 9 R Gate Resistance g N-Ch 3 P-Ch 10 15 t Turn-On Delay Time d(on) P-Channel N-Ch 10 15 V = - 15 V, R = 5 DD L P-Ch 20 30 t Rise Time r I - 3 A, V = - 10 V, R = 1 D GEN G N-Ch 15 25 P-Ch 25 40 N-Channel t Turn-Off Delay Time d(off) ns N-Ch 20 30 V = 15 V, R = 5 DD L P-Ch 30 45 I 3 A, V = 10 V, R = 1 D GEN G t Fall Time f N-Ch 10 15 I = - 1.7 A, dI/dt = 100 A/s P-Ch 25 50 F Source-Drain Reverse Recovery Time t rr I = 1.7 A, dI/dt = 100 A/s N-Ch 20 40 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72173 2 S-81544-Rev. D, 07-Jul-08