Si7720DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free e V (V) R () Q (Typ.) I (A) DS DS(on) g D SkyFET Monolithic TrenchFET Power 0.0125 at V = 10 V 12 GS MOSFET and Schottky Diode 30 13.7 nC RoHS 0.015 at V = 4.5 V 12 GS Low Thermal Resistance PowerPAK Package COMPLIANT with Small Size and Low 1.07 mm Profile 100 % R Tested g PowerPAK 1212-8 100 % UIS Tested APPLICATIONS S 3.30 mm 3.30 mm 1 S Notebook PC 2 S D - System Power 3 G Buck Converter 4 D Synchronous Rectifier Switch 8 D 7 D 6 D Schottky Diode 5 G Bottom View N-Channel MOSFET Ordering Information: Si7720DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS e T = 25 C C 12 e T = 70 C C 12 Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 12 a, b T = 70 C 10 A A I Pulsed Drain Current 50 DM e T = 25 C C 12 I Continuous Source-Drain Diode Current S a, b T = 25 C A 3.4 Single Pulse Avalanche Current I 20 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 20 AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D a, b T = 25 C A 3.8 a, b T = 70 C A 2.4 T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (Si7720DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b t 10 s R 24 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 81 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 30 DS GS D V V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 0.035 0.2 DS GS I Zero Gate Voltage Drain Current mA DSS V = 30 V, V = 0 V, T = 100 C 3.5 35 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.010 0.0125 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.012 0.015 GS D a g V = 10 V, I = 10 A 38 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1790 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 310 pF oss DS GS C Reverse Transfer Capacitance 130 rss V = 15 V, V = 10 V, I = 10 A 30 45 DS GS D Q Total Gate Charge g 13.7 21 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 5 gs DS GS D Q Gate-Drain Charge 4 gd R Gate Resistance f = 1 MHz 0.3 1.2 2.4 g Turn-On Delay Time t 23 45 d(on) t Rise Time V = 15 V, R = 1.5 13 25 r DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 29 55 D GEN g d(off) t Fall Time 12 24 f ns Turn-On Delay Time t 11 22 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 22 45 D GEN g d(off) t Fall Time 816 f www.vishay.com Document Number: 68787 2 S-81716-Rev. A, 04-Aug-08