Si7804DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0185 at V = 10 V 10 GS TrenchFET Power MOSFET 30 0.030 at V = 4.5 V 8 GS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested g PowerPAK 1212-8 APPLICATIONS DC/DC Conversion S 3.30 mm 3.30 mm 1 D S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: Si7804DN-T1-E3 (Lead (Pb)-free) Si7804DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 10 6.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 7.5 5.0 A Pulsed Drain Current I 40 A DM a I 2.9 1.2 Continuous Source Current (Diode Conduction) S I Single Pulse Avalanche Current 15 AS L = 0.1 mH E Avalanche Energy 11 mJ AS T = 25 C 3.5 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.9 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 28 35 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Case (Drain) Steady State 4.5 6.0 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72317 www.vishay.com S-83050-Rev. F, 29-Dec-08 1Si7804DN Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.8 1.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.015 0.0185 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 8 A 0.022 0.030 GS D a g V = 15 V, I = 10 A 16 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 8.7 13 g Q V = 15 V, V = 5 V, I = 10 A Gate-Source Charge 1.5 nC gs DS GS D Gate-Drain Charge Q 3.5 gd R Gate Resistance 0.5 1.4 2.2 g Turn-On Delay Time t 815 d(on) t Rise Time V = 15 V, R = 15 12 20 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 32 50 ns D GEN g d(off) t Fall Time 14 25 f Source-Drain Reverse Recovery Time t I = 2.9 A, dI/dt = 100 A/s 30 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings ma y cause permanent damage to the device. These are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 4 V V = 10 thru 5 V GS T = - 55 C C 35 35 T = 25 C C 30 30 25 25 T = 125 C C 20 20 3 V 15 15 10 10 5 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1234 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72317 2 S-83050-Rev. F, 29-Dec-08 I - Drain Current (A) D I - Drain Current (A) D