X-On Electronics has gained recognition as a prominent supplier of SI7812DN-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7812DN-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7812DN-T1-E3 Vishay

SI7812DN-T1-E3 electronic component of Vishay
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Part No.SI7812DN-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 75V 16A 52W 37mohm @ 10V
Datasheet: SI7812DN-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.859 ea
Line Total: USD 1.86 
Availability - 36647
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
36647
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.859
10 : USD 1.507
100 : USD 1.122
500 : USD 0.9581
1000 : USD 0.9493
3000 : USD 0.9207
9000 : USD 0.8987

   
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We are delighted to provide the SI7812DN-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7812DN-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7812DN Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available e 0.037 at V = 10 V 16 GS TrenchFET Power MOSFET 75 8 nC e 0.046 at V = 4.5 V GS 16 Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile PowerPAK 1212-8 APPLICATIONS Primary Side Switch S 3.30 mm 3.30 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7812DN-T1-E3 (Lead (Pb)-free) Si7812DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 75 DS V Gate-Source Voltage V 20 GS e T = 25 C 16 C e T = 70 C 16 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 7.2 a, b T = 70 C A 5.7 A Pulsed Drain Current I 25 DM e T = 25 C C 16 Continuous Source-Drain Diode Current I S a, b T = 25 C 3.2 A I Avalanche Current 15 AS L = 0.1 mH E Single-Pulse Avalanche Energy 11 mJ AS T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.8 A a, b T = 70 C A 2.4 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73332 www.vishay.com S-83050-Rev. D, 29-Dec-08 1Si7812DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b R Maximum Junction-to-Ambient t 10 s 26 33 thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 81 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 75 V DS GS D V Temperature Coefficient V /T 65 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.4 GS(th) GS(th) J V = V , I = 250 A 1.0 2.0 3.0 DS GS D Gate-Source Threshold Voltage V V GS(th) V = V , I = 5 mA 2.3 DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 75 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 75 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 25 A D(on) DS GS V = 10 V, I = 7.2 A 0.031 0.037 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.4 A 0.038 0.046 GS D a g V = 15 V, I = 7.2 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 840 iss Output Capacitance C V = 35 V, V = 0 V, f = 1 MHz 110 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = 38 V, V = 10 V, I = 7.2 A 16 24 DS GS D Total Gate Charge Q g 812 nC Q Gate-Source Charge V = 38 V, V = 4.5 V, I = 7.2 A 2.8 gs DS GS D Gate-Drain Charge Q 3.6 gd R Gate Resistance f = 1 MHz 1 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 38 V, R = 6.7 130 200 r DD L I 5.7 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 50 75 f ns t Turn-On Delay Time 15 25 d(on) t Rise Time V = 38 V, R = 6.7 20 30 r DD L I 5.7 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 35 40 d(off) Fall Time t 10 15 f www.vishay.com Document Number: 73332 2 S-83050-Rev. D, 29-Dec-08

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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