New Product Si7463ADP Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Max. I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFET 0.0100 at V = - 10 V - 46 GS 100% R and UIS Tested - 40 48.6 nC g 0.0135 at V = - 4.5 V - 40 GS Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Load Switch S 6.15 mm 5.15 mm 1 Motor Drives S 2 S 3 G 4 S D 8 D 7 D G 6 D 5 Bottom View P-Channel MOSFET Ordering Information: D Si7463ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS T = 25 C - 46 C T = 70 C - 37 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 16.6 A a, b T = 70 C - 13.3 A A I Pulsed Drain Current (t = 300 s) - 70 DM d T = 25 C - 35 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 4.3 A Avalanche Current I - 30 AS L = 0.1 mH E Single-Pulse Avalanche Energy 45 mJ AS T = 25 C 39 C T = 70 C 25 C P Maximum Power Dissipation W D a, b T = 25 C 5 A a, b T = 70 C 3.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 20 25 thJA C/W R Maximum Junction-to-Case Steady State 2.1 3.2 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 70 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 63354 www.vishay.com S11-1661-Rev. A, 15-Aug-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si7463ADP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 40 V DS GS D V Temperature Coefficient V /T - 33 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.2 - 2.3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0083 0.0100 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0112 0.0135 GS D a g V = - 10 V, I = - 15 A 40 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4150 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 436 pF oss DS GS C Reverse Transfer Capacitance 400 rss V = - 20 V, V = - 10 V, I = - 10 A 96 144 DS GS D Q Total Gate Charge g 48.6 73 nC Q V = - 20 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 11 gs DS GS D Q Gate-Drain Charge 21.8 gd R Gate Resistance f = 1 MHz 0.4 1.5 3.0 g t Turn-On Delay Time 15 30 d(on) t V = - 20 V, R = 2 Rise Time 14 28 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 56 110 d(off) D GEN g t Fall Time 11 22 f ns t Turn-On Delay Time 60 110 d(on) t V = - 20 V, R = 2 Rise Time 56 110 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 50 100 d(off) D GEN g t Fall Time 22 40 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 50 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 - 0.74 - 1.1 V SD S GS Body Diode Reverse Recovery Time t 29 55 ns rr Body Diode Reverse Recovery Charge Q 25 46 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 16 a ns Reverse Recovery Rise Time t 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63354 2 S11-1661-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000