Si7469DP Vishay Siliconix P-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.025 at V = - 10 V - 28 GS TrenchFET Power MOSFET - 80 55 nC 0.029 at V = - 4.5 V - 28 GS PowerPAK SO-8 S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si7469DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 80 DS V V Gate-Source Voltage 20 GS a T = 25 C C - 28 a T = 70 C C - 28 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 10.2 b, c T = 70 C A - 8.1 A I Pulsed Drain Current - 40 DM a T = 25 C C - 28 Continuous Source-Drain Diode Current I S b, c T = 25 C A - 4.3 I Avalanche Current - 45 AS L = 0.1 mH Single-Pulse Avalanche Energy E 100 mJ AS T = 25 C 83 C T = 70 C 53 C Maximum Power Dissipation P W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.2 1.5 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. Document Number: 73438 www.vishay.com S09-0271-Rev. C, 16-Feb-09 1Si7469DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 80 V DS GS D V Temperature Coefficient V /T - 79.6 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 80 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 80 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 10 V - 40 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 10.2 A 0.021 0.025 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 8.1 A 0.024 0.029 GS D a g V = - 15 V, I = - 10.2 A 52 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4700 iss Output Capacitance C V = - 40 V, V = 0 V, f = 1 MHz 320 pF oss DS GS C Reverse Transfer Capacitance 235 rss V = - 40 V, V = - 10 V, I = - 10.2 A 105 160 DS GS D Q Total Gate Charge g 55 85 nC Q Gate-Source Charge V = - 40 V, V = - 4.5 V, I = - 10.2 A 16 gs DS GS D Q Gate-Drain Charge 26 gd R Gate Resistance f = 1 MHz 4 g t Turn-On Delay Time 45 70 d(on) t Rise Time V = - 40 V, R = 4.9 220 330 r DD L ns I - 8.1 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 95 145 d(off) Fall Time t 110 165 f t Turn-On Delay Time 15 25 d(on) Rise Time t 25 40 V = - 40 V, R = 4.9 r DD L ns I - 8.1 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 105 160 d(off) Fall Time t 100 150 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 28 S C A a I - 40 Pulse Diode Forward Current SM Body Diode Voltage V I = - 8.1 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 55 85 ns rr Body Diode Reverse Recovery Charge Q 110 165 nC rr I = - 8.1 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 37 a ns Reverse Recovery Rise Time t 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73438 2 S09-0271-Rev. C, 16-Feb-09