Si7489DP Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.041 at V = - 10 V - 28 GS TrenchFET Power MOSFET - 100 54 nC 0.047 at V = - 4.5 V - 28 GS PowerPAK SO-8 S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7489DP-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si7489DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 100 DS V Gate-Source Voltage V 20 GS a T = 25 C C - 28 a T = 70 C C - 24.9 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 7.8 b, c T = 70 C A - 6.2 A Pulsed Drain Current I - 40 DM a T = 25 C C - 28 I Continuous Source-Drain Diode Current S b, c T = 25 C A - 4.3 Avalanche Current I - 35 AS L = 0.1 mH Single-Pulse Avalanche Energy E 61 mJ AS T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.2 1.5 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. Document Number: 73436 www.vishay.com S09-0271-Rev. C, 16-Feb-09 1Si7489DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 100 V DS GS D V Temperature Coefficient V /T - 113 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 100 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 100 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 10 V - 40 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 7.8 A 0.033 0.041 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 7.3 A 0.038 0.047 GS D a g V = - 15 V, I = - 7.8 A 38 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4600 iss Output Capacitance C V = - 50 V, V = 0 V, f = 1 MHz 230 pF oss DS GS C Reverse Transfer Capacitance 175 rss V = - 50 V, V = - 10 V, I = - 7.8 A 106 160 DS GS D Q Total Gate Charge g 54 81 nC Q Gate-Source Charge V = - 50 V, V = - 4.5 V, I = - 7.8 A 14 gs DS GS D Q Gate-Drain Charge 26 gd R Gate Resistance f = 1 MHz 4 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 50 V, R = 8.1 20 30 r DD L I - 6.2 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 110 165 d(off) Fall Time t 100 150 f ns t Turn-On Delay Time 42 65 d(on) Rise Time t 160 240 V = - 50 V, R = 8.1 r DD L I - 6.2 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 100 150 d(off) Fall Time t 100 150 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 28 S C A a I - 40 Pulse Diode Forward Current SM Body Diode Voltage V I = - 6.2 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 60 90 ns rr Body Diode Reverse Recovery Charge Q 150 225 nC rr I = - 6.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 46 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73436 2 S09-0271-Rev. C, 16-Feb-09