X-On Electronics has gained recognition as a prominent supplier of SI7489DP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7489DP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7489DP-T1-E3 Vishay

SI7489DP-T1-E3 electronic component of Vishay
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Part No.SI7489DP-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 100V 28A 83W
Datasheet: SI7489DP-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9122 ea
Line Total: USD 1.91 
Availability - 2089
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14550
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.339

2089
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9122
10 : USD 1.6354
30 : USD 1.4617
100 : USD 1.2843
500 : USD 1.2041
1000 : USD 1.1699

13925
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.6105
10 : USD 1.909
100 : USD 1.4605
500 : USD 1.288
1000 : USD 1.242
3000 : USD 1.2305

11640
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.6817

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.504

5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.3647

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7489DP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7489DP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7489DP Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.041 at V = - 10 V - 28 GS TrenchFET Power MOSFET - 100 54 nC 0.047 at V = - 4.5 V - 28 GS PowerPAK SO-8 S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7489DP-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si7489DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 100 DS V Gate-Source Voltage V 20 GS a T = 25 C C - 28 a T = 70 C C - 24.9 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 7.8 b, c T = 70 C A - 6.2 A Pulsed Drain Current I - 40 DM a T = 25 C C - 28 I Continuous Source-Drain Diode Current S b, c T = 25 C A - 4.3 Avalanche Current I - 35 AS L = 0.1 mH Single-Pulse Avalanche Energy E 61 mJ AS T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.2 1.5 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. Document Number: 73436 www.vishay.com S09-0271-Rev. C, 16-Feb-09 1Si7489DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 100 V DS GS D V Temperature Coefficient V /T - 113 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 100 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 100 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 10 V - 40 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 7.8 A 0.033 0.041 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 7.3 A 0.038 0.047 GS D a g V = - 15 V, I = - 7.8 A 38 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4600 iss Output Capacitance C V = - 50 V, V = 0 V, f = 1 MHz 230 pF oss DS GS C Reverse Transfer Capacitance 175 rss V = - 50 V, V = - 10 V, I = - 7.8 A 106 160 DS GS D Q Total Gate Charge g 54 81 nC Q Gate-Source Charge V = - 50 V, V = - 4.5 V, I = - 7.8 A 14 gs DS GS D Q Gate-Drain Charge 26 gd R Gate Resistance f = 1 MHz 4 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 50 V, R = 8.1 20 30 r DD L I - 6.2 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 110 165 d(off) Fall Time t 100 150 f ns t Turn-On Delay Time 42 65 d(on) Rise Time t 160 240 V = - 50 V, R = 8.1 r DD L I - 6.2 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 100 150 d(off) Fall Time t 100 150 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 28 S C A a I - 40 Pulse Diode Forward Current SM Body Diode Voltage V I = - 6.2 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 60 90 ns rr Body Diode Reverse Recovery Charge Q 150 225 nC rr I = - 6.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 46 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73436 2 S09-0271-Rev. C, 16-Feb-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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