X-On Electronics has gained recognition as a prominent supplier of SI7540ADP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7540ADP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7540ADP-T1-GE3 Vishay

SI7540ADP-T1-GE3 electronic component of Vishay
SI7540ADP-T1-GE3 Vishay
SI7540ADP-T1-GE3 MOSFETs
SI7540ADP-T1-GE3  Semiconductors

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Part No. SI7540ADP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -20V Vds 12V Vgs PowerPAK SO-8
Datasheet: SI7540ADP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
40: USD 1.6189 ea
Line Total: USD 64.76 
Availability - 4190
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
4190
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 40
Multiples : 1
40 : USD 1.6189
48 : USD 1.3474
49 : USD 1.3339
100 : USD 1.1596
250 : USD 1.1479
500 : USD 0.9572
1000 : USD 0.9531
3000 : USD 0.9491

60
Ship by Tue. 25 Mar to Fri. 28 Mar
MOQ : 1
Multiples : 1
1 : USD 2.6402
10 : USD 1.9244
30 : USD 1.5654
100 : USD 1.2418
500 : USD 1.1579
1000 : USD 1.1204

   
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We are delighted to provide the SI7540ADP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7540ADP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm Si7540ADP www.vishay.com Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK SO-8 Dual D TrenchFET power MOSFETs 1 D 1 8 D Thermally enhanced PowerPAK 2 7 D 6 2 100 % R tested g 5 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 2 S 1 3 G APPLICATIONS 1 1 44 S 2 D S 1 2 G DC/DC converters 2 Top View Bottom View Synchronous buck converter PRODUCT SUMMARY Synchronous rectifier G 2 N-CHANNEL P-CHANNEL Load switch G 1 V (V) 20 -20 DS Motor drive switch R ( ) at V = 4.5 V 0.0150 0.0280 DS(on) GS R ( ) at V = 2.5 V 0.0195 0.0430 DS(on) GS S 1 D Q typ. (nC) 8.5 16 2 g N-Channel MOSFET a, b I (A) 12 9 D P-Channel MOSFET Configuration N- and p-pair ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free Si7540ADP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT 10 s STEADY 10 s STEADY Drain-source voltage V 20 -20 DS V Gate-source voltage V 12 GS T = 25 C 12 8 -9 -6.1 A a, b Continuous drain current (T = 150 C) I J D T = 70 C 9.8 6.5 -7.3 -4.9 A A Pulsed drain current I 35 -25 DM b Continuous source current (diode conduction) I 2.9 1.3 -2.9 -1.3 S T = 25 C 3.5 1.6 3.5 1.6 A b Maximum power dissipation P W D T = 70 C 2.3 1 2.3 1 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b, f Maximum junction-to-ambient t 10 s R 25 35 25 35 thJA C/W Maximum junction-to-case (drain) Steady state R 4.6 6 4.8 6.3 thJC Notes a. Based on silicon capability only. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. S16-2274-Rev. C, 14-Nov-16 Document Number: 62951 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mmSi7540ADP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAXUNIT Static V = 0 V, I = 250 A N-Ch 20 - - GS D Drain-source breakdown voltage V V DS V = 0 V, I = -250 A P-Ch -20 - - GS D I = 250 A N-Ch - 17 - D V temperature coefficient V /T DS DS J I = -250 A P-Ch - -11 - D mV/C I = 250 A N-Ch - -3.7 - D V temperature coefficient V /T GS(th) GS(th) J I = -250 A P-Ch - 5.5 - D V = V , I = 250 A N-Ch 0.6 - 1.4 DS GS D Gate threshold voltage V V GS(th) V = V , I = -250 A P-Ch -0.6 - -1.4 DS GS D N-Ch - - 100 Gate-body leakage I V = 0 V, V = 12 V nA GSS DS GS P-Ch - - 100 V = 20 V, V = 0 V N-Ch - - 1 DS GS V = -20 V, V = 0 V P-Ch - - -1 DS GS Zero gate voltage drain current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch - - 10 DS GS J V = -20 V, V = 0 V, T = 55 C P-Ch - - -10 DS GS J V 5 V, V = 4.5 V N-Ch 20 - - DS GS b On-state drain current I A D(on) V -5 V, V = -4.5 V P-Ch -20 - - DS GS V = 4.5 V, I = 12 A N-Ch - 0.0115 0.0150 GS D V = -4.5 V, I = -9 A P-Ch - 0.0220 0.0280 GS D b Drain-source on-state resistance R DS(on) V = 2.5 V, I = 9 A N-Ch - 0.0150 0.0195 GS D V = -2.5 V, I = -6 A P-Ch - 0.0330 0.0430 GS D V = 10 V, I = 12 A N-Ch - 55 - DS D b Forward transconductance g S fs V = -10 V, I = -9 A P-Ch - 24 - DS D a Dynamic N-Ch - 915 - Input capacitance C iss P-Ch - 1310 - N-channel V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch - 235 - Output capacitance C pF oss P-Ch - 310 - P-channel V = -10 V, V = 0 V, f = 1 MHz DS GS N-Ch - 110 - Reverse transfer capacitance C rss P-Ch - 270 - V = 10 V, V = 10 V, I = 12 A N-Ch - 18 27 DS GS D V = -10 V, V = -10 V, I = -9 A P-Ch - 32 48 DS GS D Total gate charge Q g N-Ch - 8.5 13 P-Ch - 16 24 N-channel nC V = 10 V, V = 4.5 V, I = 12 A DS GS D N-Ch - 1.8 - Gate-source charge Q gs P-Ch - 2.3 - P-channel V = -10 V, V = -4.5 V, I = -9 A DS GS D N-Ch - 2.2 - Gate-drain charge Q gd P-Ch - 6 - N-Ch 0.6 3.2 6.4 Gate resistance R f = 1 MHz g P-Ch 0.2 1 2 S16-2274-Rev. C, 14-Nov-16 Document Number: 62951 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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