DMC1015UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
Thermally Efficient Package Cooler Running Applications
I
D
Device
BV R
DSS DS(ON)
T = +25C High Conversion Efficiency
A
Low R Minimizes On State Losses
DS(ON)
17m @ V = 4.5V 9.5A
GS
Q1 12V
Low Input Capacitance
7.8A
25m @ V = 2.5V
GS
Fast Switching Speed
-6.8A
35m @ V = -4.5V
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Q2
-20V
55m @ V = -2.5V -5.3A
GS Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: PowerDI5060-8 (Type C)
Case Material: Molded Plastic, Green Molding Compound. UL
This new generation Complementary Pair Enhancement Mode
Flammability Classification Rating 94V-0
MOSFET has been designed to minimize R and yet maintain
DS(ON)
Moisture Sensitivity: Level 1 per J-STD-020
superior switching performance. This device is ideal for use in
Notebook battery power management and Load switch.
Terminals: Finish 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram Below
Notebook Battery Power Management
Weight: 0.097 grams (Approximate)
DC-DC Converters
Load Switch
D1
D2
S1
D1
G1
D1
G1
G2
D2
S2
S2
S1
D2
G2
Pin1
Top View
Top View Q2 P-Channel MOSFET Pin Configuration
Bottom View Q1 N-Channel MOSFET
Ordering Information (Note 4)
Part Number Case Packaging
DMC1015UPD-13 PowerDI5060-8 (Type C) 2,500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC1015UPD
Maximum Ratings (@T = +25C unless otherwise specified.)
A
Characteristic Symbol Q1 Value Q2 Value Unit
Drain-Source Voltage V 12 -20 V
DSS
Gate-Source Voltage V 8 8 V
GSS
Steady T = +25C 9.5 -6.8
A
A
I
D
State 7.6 -5.4
T = +70C
A
Continuous Drain Current (Note 5) V = 4.5V
GS
T = +25C 13.0 -9.4
A
t<10s I A
D
10.4 -7.5
T = +70C
A
Maximum Body Diode Forward Current (Note 5) I 2.4 -2.2 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 65 -35 A
DM
Avalanche Current (Note 6) L = 0.1mH I 22 -20 A
AS
Avalanche Energy (Note 6) L = 0.1mH E 25 20 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
2.3
T = +25C
A
Total Power Dissipation (Note 5) W
P
D
T = +70C 1.5
A
Steady State 56
Thermal Resistance, Junction to Ambient (Note 5) R
JA
t<10s 29
C/W
Thermal Resistance, Junction to Case R 5.4
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics Q1 N-Channel (@T = +25C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 12 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 12V, V = 0V
DSS DS GS
Gate-Source Leakage nA
I 100 V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 0.6 0.8 1.5 V
V V = V , I = 250A
GS(TH) DS GS D
9.6 17
V = 4.5V, I = 11.8A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
11 25 V = 2.5V, I = 9.8A
GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 2.9A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 1495
iss
V = 6V, V = 0V,
DS GS
Output Capacitance C 310 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance 285
Crss
Gate Resistance 1.6
Rg VDS = 0V, VGS = 0V, f = 1.0MHz
11.5
Total Gate Charge (V = 3.3V) Q
GS g
15.6
Total Gate Charge (V = 4.5V) Q
GS g
nC
V = 6V, I = 11.8A
DS D
Gate-Source Charge 2.3
Q
gs
Gate-Drain Charge 4.6
Q
gd
Turn-On Delay Time t 5.7
D(ON)
Turn-On Rise Time t 10.1 V = 6V, R = 6
R DD L
ns
Turn-Off Delay Time t 40.4 V = 4.5V, R = 6, I = 1A
D(OFF) GS g D
Turn-Off Fall Time t 22.5
F
Body Diode Reverse Recovery Time t 16.4 ns I = 2.9, di/dt = 100A/s
RR F
Body Diode Reverse Recovery Charge 3.2 nC
Q I = 2.9A, di/dt = 100A/s
RR F
POWERDI is a registered trademark of Diodes Incorporated.
2 of 10
DMC1015UPD July 2016
Diodes Incorporated
www.diodes.com
Document number: DS37992 Rev. 3 - 2