X-On Electronics has gained recognition as a prominent supplier of IPB020N10N5LFATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB020N10N5LFATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB020N10N5LFATMA1 Infineon

Name: IPB020N10N5LFATMA1
Brand: Infineon
SKU: IPB020N10N5LFATMA1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IPB020N10N5LFATMA1 electronic component of Infineon

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See Product Specifications

Part No.	IPB020N10N5LFATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET DIFFERENTIATED MOSFETS
Datasheet:	IPB020N10N5LFATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

8: USD 7.6869 ea
Line Total: USD 61.5

Availability - 953
Ship by Fri. 21 Feb to Thu. 27 Feb

MOQ: 8 Multiples: 1
Pack Size: 1

IPB020N10N5LFATMA1 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

953

Ship by Fri. 21 Feb to Thu. 27 Feb

MOQ : 8
Multiples : 1

8 : USD 7.6869
13 : USD 5.1909
25 : USD 5.1389
100 : USD 4.785
250 : USD 4.63
500 : USD 4.4737

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

120 A 120 A

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

1.7 mOhms 1.7 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

2.2 V 2.2 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

375 W 375 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

D2PAK - 3 D2PAK - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

210 nC 210 nC

Channel Mode

Enhancement Enhancement

Tradename

Optimos Optimos

Configuration

Single Single

Series

Optimos 5 Optimos 5

Transistor Type

1 N - Channel 1 N - Channel

Brand

Infineon Technologies Infineon Technologies

Forward Transconductance - Min

124 S 124 S

Fall Time

29 ns 29 ns

Product Type

Mosfet Mosfet

Rise Time

26 ns 26 ns

Factory Pack Quantity :

1000 1000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

77 ns 77 ns

Typical Turn-On Delay Time

33 ns 33 ns

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

IPB020N10N5LFATMA1 Alternative Parts

We are delighted to provide the IPB020N10N5LFATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB020N10N5LFATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

IPB020N10N5LF MOSFET TM DPAK OptiMOS 5 Linear FET , 100 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 100 V DS Gate Pin 1 RDS(on),max 2.0 m Source Pin 3 I (silicon limited) 289 A D I (package limited) 120 A D I (V =56 V, t =10 pulse DS p 10.2 A ms) Type / Ordering Code Package Marking Related Links IPB020N10N5LF PG-TO 263-3 020N10LF - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.1, 2017-02-16TM OptiMOS 5 Linear FET , 100 V IPB020N10N5LF Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.1, 2017-02-16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
953 Ship by Fri. 21 Feb to Thu. 27 Feb MOQ : 8 Multiples : 1	8 : USD 7.6869 13 : USD 5.1909 25 : USD 5.1389 100 : USD 4.785 250 : USD 4.63 500 : USD 4.4737

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