Si7540DP Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.017 at V = 4.5 V 11.8 TrenchFET Power MOSFETs GS N-Channel 12 New Low Thermal Resistance PowerPAK 0.025 at V = 2.5 V 9.8 GS Package with Low 1.07 mm Profile 0.032 at V = - 4.5 V - 8.9 GS PWM Optimized for High Efficiency P-Channel - 12 100 % R Tested 0.053 at V = - 2.5 V - 6.9 g GS APPLICATIONS PowerP AK SO-8 Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down - Q Optimized for 500 kHz Operation S1 g 6.15 mm 5.15 mm 1 Synchronous Buck, Shoot-Thru Resistant G1 2 S2 D S 1 2 3 G2 4 D1 8 D1 7 G 2 D2 6 G D2 1 5 Bottom V i e w Ordering Information: Si7540DP-T1-E3 (Lead (Pb)-free) S D 1 2 Si7540DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol Unit 10 s Steady 10 s Steady Drain-Source Voltage V 12 - 12 DS V Gate-Source Voltage V 8 GS T = 25 C 11.8 7.6 - 8.9 - 5.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 9.5 6.1 - 7.1 - 4.6 A A Pulsed Drain Current I 20 DM a I 2.9 1.1 - 2.9 - 1.1 Continuous Source Current (Diode Conduction) S T = 25 C 3.5 1.4 3.5 1.4 A a P W Maximum Power Dissipation D T = 70 C 2.2 0.9 2.2 0.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b,c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typical Maximum Typical Maximum t 10 s 26 35 26 35 a R Maximum Junction-to-Ambient thJA Steady State 60 85 60 85 C/W Maximum Junction-to-Case (Drain) Steady State R 3.9 5.5 3.9 5.5 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71911 www.vishay.com S09-0227-Rev. F, 09-Feb-09 1Si7540DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Condition Min. Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.6 1.5 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.6 - 1.5 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 8 V nA GSS DS GS P-Ch 100 V = 12 V, V = 0 V N-Ch 1 DS GS V = - 12 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 12 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V 5 V, V = 4.5 V N-Ch 20 DS GS a I A On-State Drain Current D(on) V 5 V, V = - 4.5 V P-Ch - 20 DS GS V = 4.5 V, I = 11.8 A N-Ch 0.014 0.017 GS D V = - 4.5 V, I = - 8.9 A P-Ch 0.026 0.032 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 9.8 A N-Ch 0.020 0.025 GS D V = - 2.5 V, I = - 6.9 A P-Ch 0.043 0.053 GS D V = 5 V, I = 11.8 A N-Ch 32 DS D a g S Forward Transconductance fs V = - 5 V, I = - 8.9 A P-Ch 23 DS D I = 2.9 A, V = 0 V N-Ch 0.77 1.2 S GS a V V Diode Forward Voltage SD I = - 2.9 A, V = 0 V P-Ch - 0.8 - 1.2 S GS b Dynamic N-Ch 11.5 17 Q Total Gate Charge g N-Channel P-Ch 13 20 V = 6 V, V = 4.5 V, I = 11.8 A DS GS D N-Ch 3.2 Q Gate-Source Charge nC gs P-Ch 4.1 P-Channel N-Ch 2.5 V = - 6 V, V = - 4.5 V, I = - 8.9 A DS GS D Q Gate-Drain Charge gd P-Ch 1.9 N-Ch 0.5 1.7 2.5 R Gate Resistance g P-Ch 1.5 3.5 5.6 N-Ch 30 45 t Turn-On Delay Time d(on) N-Channel P-Ch 35 55 V = 6 V, R = 6 DD L N-Ch 50 75 t Rise Time r I 1 A, V = 4.5 V, R = 6 D GEN g P-Ch 42 65 N-Ch 60 90 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 54 85 V = - 6 V, R = 6 DD L N-Ch 25 40 I - 1 A, V = - 4.5 V, R = 6 D GEN g t Fall Time f P-Ch 17 30 I = 2.9 A, dI/dt = 100 A/s N-Ch 40 80 Source-Drain Reverse Recovery F t rr Time I = - 2.9 A, dI/dt = 100 A/s P-Ch 40 80 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71911 2 S09-0227-Rev. F, 09-Feb-09