New Product Si7456CDP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0235 at V = 10 V 27.5 TrenchFET Power MOSFET GS 100 % R Tested 0.0245 at V = 7.5 V 100 27 7.7 nC GS g 100 % UIS Tested 0.0315 at V = 4.5 V 24 GS Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS DC/DC Primary Side Switch Telecom/Server 48 V, Full/Half-Bridge dc-to-dc S 6.15 mm 5.15 mm Industrial 1 S D 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7456CDP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS T = 25 C 27.5 C T = 70 C 22 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 10.3 b, c T = 70 C A 8.2 A I Pulsed Drain Current 50 DM T = 25 C 25 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 15 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 11.2 AS T = 25 C 35.7 C T = 70 C 22.8 C Maximum Power Dissipation P W D b, c T = 25 C A 5.0 b, c T = 70 C A 3.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 20 25 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.9 3.5 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. Document Number: 65941 www.vishay.com S10-0785-Rev. A, 05-Apr-10 1New Product Si7456CDP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 47 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0195 0.0235 GS D a R V = 7.5 V, I = 9 A 0.0204 0.0245 Drain-Source On-State Resistance DS(on) GS D V = 4.5 V, I = 8 A 0.026 0.0315 GS D a g V = 10 V, I = 10 A 25 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 730 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 425 pF oss DS GS C Reverse Transfer Capacitance 30 rss V = 50 V, V = 10 V, I = 10 A 15 23 DS GS D Total Gate Charge Q V = 50 V, V = 7.5 V, I = 10 A 11.6 18 g DS GS D 7.7 12 nC Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 10 A 2.0 gs DS GS D Q Gate-Drain Charge 3.7 gd Gate Resistance R f = 1 MHz 1 5 10 g t Turn-On Delay Time 918 d(on) Rise Time t 13 26 V = 50 V, R = 5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 22 44 d(off) Fall Time t 10 20 f ns t Turn-On Delay Time 11 22 d(on) Rise Time t 14 28 V = 50 V, R = 5 r DD L I 10 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 40 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 25 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 4 A 0.79 1.1 V SD S t Body Diode Reverse Recovery Time 34 68 ns rr Body Diode Reverse Recovery Charge Q 32 64 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 16 a ns t Reverse Recovery Rise Time 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65941 2 S10-0785-Rev. A, 05-Apr-10