6.15 mm Si7439DP www.vishay.com Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single TrenchFET power MOSFETs D D 8 Ultra low on-resistance critical for application D 7 D 6 Low thermal resistance PowerPAK package 5 with low 1.07 mm profile 100 % R and avalanche tested g Available Material categorization: for definitions of 1 compliance please see www.vishay.com/doc 99912 2 S 3 S 4 S APPLICATIONS 1 S G Active clamp in intermediate Top View Bottom View DC/DC power supplies G PRODUCT SUMMARY V (V) -150 DS R max. ( ) at V = -10 V 0.090 DS(on) GS R max. ( ) at V = -6 V 0.095 DS(on) GS D Q typ. (nC) 88, g P-Channel MOSFET I (A) -5.2 D Configuration Single ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free Si7439DP-T1-E3 Lead (Pb)-free and halogen-free Si7439DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A STEADY PARAMETER SYMBOL 10 s UNIT STATE Drain-source voltage V -150 DS V Gate-source voltage V 20 GS T = 25 C -5.2 -3 A a Continuous drain current (T = 150 C) I J D T = 70 C -4.1 -2.4 A Pulsed drain current I -50 A DM a Continuous source current (diode conduction) I -4.2 -1.6 S Single pulse avalanche current I -40 AS L = 0.1 mH Single pulse avalanche energy E 80 mJ AS T = 25 C 5.4 1.9 A a Maximum power dissipation P W D T = 70 C 3.4 1.2 A Operating junction and storage temperature range T , T -55 to 150 J stg C b, c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 10 s 18 23 a Maximum junction-to-ambient R thJA Steady state 50 65 C/W Maximum junction-to-case (drain) Steady state R 11.5 thJC Notes a. Surface mounted on 1 x 1 FR4 board b. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S18-0353-Rev. F, 26-Mar-18 Document Number: 73106 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mm Si7439DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Gate threshold voltage V V = V , I = -250 A -2 - -4 V GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -150 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -150 V, V = 0 V, T = 70 C - - -10 DS GS J a On-state drain current I V = -10 V, V = -10 V -30 - - A D(on) DS GS V = -10 V, I = -5.2 A - 0.073 0.090 GS D a Drain-source on-state resistance R DS(on) V = -6 V, I = -5 A - 0.077 0.095 GS D a Forward transconductance g V = -15 V, I = -5.2 A - 19 - S fs DS D a Diode forward voltage V I = -4.2 A, V = 0 V - -0.78 -1.2 V SD S GS b Dynamic Total gate charge Q - 88 135 g Gate-source charge Q V = -75 V, V = -10 V, I = -5.2 A - 17.5 - nC gs DS GS D Gate-drain charge Q - 26.5 - gd Gate resistance R 1.5 3 4.5 g Turn-on delay time t -25 40 d(on) Rise time t -46 70 V = -75 V, R = 15.5 r DD L I -4.8 A, V = -10 V, R = 6 Turn-off delay time t D GEN g - 115 180 ns d(off) Fall time t - 64 100 f Source-drain reverse recovery time t I = -2.9 A, di/dt = 100 A/s - 100 150 rr F Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 50 40 35 V = 10 V thru 5 V GS 40 30 25 30 20 20 15 T = 125 C C 10 10 25 C 5 4 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 2468 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics S18-0353-Rev. F, 26-Mar-18 Document Number: 73106 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D