Si7409ADN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 0.019 at V = - 4.5 V - 11 GS TrenchFET Power MOSFET - 30 25 0.031 at V = - 2.5 V - 8.5 GS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile V Optimized for Load Switch DS 100 % R Tested g PowerPAK 1212-8 APPLICATIONS Load Switch S S 3.30 mm 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7409ADN-T1-E3 (Lead (Pb)-free) Si7409ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 30 DS V Gate-Source Voltage V 12 GS T = 25 C - 11 - 7 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 7.9 - 5 A A I Pulsed Drain Current - 40 DM a I - 3.2 - 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 85 C 2.0 0.8 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 26 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R 1.9 2.4 Maximum Junction-to-Case Steady State thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73246 www.vishay.com S-83051-Rev. C, 29-Dec-08 1Si7409ADN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 85 C - 5 DS GS J a I V - 5 V, V = - 4.5 V - 40 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 11 A 0.015 0.019 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 8.5 A 0.025 0.031 GS D a g V = - 15 V, I = - 11 A 40 S Forward Transconductance fs DS D a V I = - 3.2 A, V = 0 V - 0.7 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 25 40 g Q V = - 15 V, V = - 4.5 V, I = - 11 A Gate-Source Charge 5 nC gs DS GS D Gate-Drain Charge Q 9 gd R Gate Resistance f = 1.0 MHz 3.3 6.5 10 g Turn-On Delay Time t 30 45 d(on) t Rise Time V = - 15 V, R = 15 50 75 r DD L I - 1 A, V = - 4.5 V, R = 6 Turn-Off Delay Time t 115 175 ns D GEN g d(off) t Fall Time 75 115 f Source-Drain Reverse Recovery Time t 60 90 rr I = - 3.2 A, dI/dt = 100 A/s F Q Reverse Recovery Charge 100 150 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 30 V = 5 thru 2 V GS 25 25 20 20 1.5 V 15 15 10 10 T = 125 C C 5 5 25 C 1 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 01234 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73246 2 S-83051-Rev. C, 29-Dec-08 I - Drain Current (A) D I - Drain Current (A) D