X-On Electronics has gained recognition as a prominent supplier of SI7405BDN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7405BDN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7405BDN-T1-GE3 Vishay

SI7405BDN-T1-GE3 electronic component of Vishay
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Part No.SI7405BDN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 12V 16A 33W 13mohm @ 4.5V
Datasheet: SI7405BDN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.6029
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.5784
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4609
10 : USD 1.2058
100 : USD 0.9229
500 : USD 0.7942
1000 : USD 0.6968
3000 : USD 0.6957
N/A

Obsolete
0
MOQ : 69
Multiples : 1
69 : USD 1.0669
100 : USD 1.0555
250 : USD 1.044
500 : USD 1.0327
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7405BDN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7405BDN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si7405BDN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET a 0.013 at V = - 4.5 V - 16 GS RoHS a - 12 0.017 at V = - 2.5 V 46 nC GS - 16 COMPLIANT APPLICATIONS a 0.024 at V = - 1.8 V GS - 16 Load Switch, PA Switch and Power Switch for Portable Devices PowerPAK 1212-8 S 3.30 mm 3.30 mm S 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7405BDN-T1-E3 (Lead (Pb)-free) Si7405BDN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 12 DS V V Gate-Source Voltage 8 GS a T = 25 C C - 16 a T = 70 C - 16 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 13.5 A b, c T = 70 C A - 11 A Pulsed Drain Current I - 40 DM a T = 25 C - 16 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 3 A T = 25 C 33 C T = 70 C 21 C P Maximum Power Dissipation W D b, c T = 25 C 3.6 A b, c T = 70 C 2.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 28 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 2.9 3.8 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7405BDN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 10 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 13.5 A 0.009 0.013 GS D a R V = - 2.5 V, I = - 12 A 0.012 0.017 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 4.2 A 0.016 0.024 GS D a g V = - 6 V, I = - 13.5 A 55 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3500 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 910 pF oss DS GS C Reverse Transfer Capacitance 860 rss V = - 6 V, V = - 8 V, I = - 10 A 75 115 DS GS D Q Total Gate Charge g 46 70 nC Q Gate-Source Charge V = - 6 V, V = - 4.5 V, I = - 10 A 4.5 gs DS GS D Q Gate-Drain Charge 14 gd R Gate Resistance f = 1 MHz 3 g t Turn-On Delay Time 22 35 d(on) t Rise Time V = - 6 V, R = 0.6 60 90 r DD L I - 10 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 80 120 D GEN g d(off) t Fall Time 45 70 f ns Turn-On Delay Time t 12 20 d(on) t Rise Time V = - 6 V, R = 0.6 15 25 r DD L I - 10 A, V = - 8 V, R = 1 Turn-Off Delay Time t 75 115 D GEN g d(off) t Fall Time 45 70 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 12 S C A I Pulse Diode Forward Current 30 SM V I = - 10 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 50 75 ns rr Q Body Diode Reverse Recovery Charge 30 45 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 20 a ns t Reverse Recovery Rise Time 30 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69941 2 S-81549-Rev. B, 07-Jul-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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