X-On Electronics has gained recognition as a prominent supplier of SI7415DN-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7415DN-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7415DN-T1-E3 Vishay

SI7415DN-T1-E3 electronic component of Vishay
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Part No.SI7415DN-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -60V Vds 20V Vgs PowerPAK 1212-8
Datasheet: SI7415DN-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.6695 ea
Line Total: USD 2008.5 
Availability - 8730
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
29100
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.7699
6000 : USD 0.762
9000 : USD 0.7293

8730
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.6695
6000 : USD 0.6695

1695
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4105
10 : USD 1.2396
30 : USD 1.1314
100 : USD 1.0214
500 : USD 0.972
1000 : USD 0.9492

33328
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.749
10 : USD 1.408
100 : USD 1.0153
500 : USD 0.8305
1000 : USD 0.8151
3000 : USD 0.7535

   
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Drain-Source Breakdown Voltage
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We are delighted to provide the SI7415DN-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7415DN-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7415DN Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.065 at V = - 10 V - 5.7 GS TrenchFET Power MOSFET - 60 0.110 at V = - 4.5 V - 4.4 GS Fast Switching APPLICATIONS Load Switches Half-Bridge Motor Drives High Voltage Non-Synchronous Buck Converters PowerPAK 1212-8 S 3.30 mm 3.30 mm S 1 S 2 S 3 G 4 D G 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7415DN-T1-E3 (Lead (Pb)-free) Si7415DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 60 DS V V Gate-Source Voltage 20 GS T = 25 C - 5.7 - 3.6 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.6 - 2.9 A A I Pulsed Drain Current - 30 DM a I - 3.2 - 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.0 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 26 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71691 www.vishay.com S-83043-Rev. E, 22-Dec-08 1Si7415DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ. Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 60 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 60 V, V = 0 V, T = 70 C - 5 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 5.7 A 0.054 0.065 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 4.4 A 0.090 0.110 GS D a g V = - 15 V, I = - 5.7 A 11 S Forward Transconductance fs DS D a V I = - 3.2 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 15 25 g Q V = - 30 V, V = - 10 V, I = - 5.7 A Gate-Source Charge 4 nC gs DS GS D Gate-Drain Charge Q 3.2 gd t Turn-On Delay Time 12 20 d(on) Rise Time t 12 20 V = - 30 V, R = 30 r DD L I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN g 22 35 ns d(off) Fall Time t 16 25 f t I = - 3.2 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 45 90 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 10 thru 5 V GS 16 16 12 12 4 V 8 8 T = 125 C C 4 4 25 C 3 V - 55 C 0 0 0 1234 5 0 1234 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71691 2 S-83043-Rev. E, 22-Dec-08 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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