X-On Electronics has gained recognition as a prominent supplier of SI7423DN-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7423DN-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7423DN-T1-E3 Vishay

SI7423DN-T1-E3 electronic component of Vishay
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Part No.SI7423DN-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 11.7A 3.8W 18mohm @ 10V
Datasheet: SI7423DN-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.679 ea
Line Total: USD 1.68 
Availability - 25412
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.715
6000 : USD 0.715

25412
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.679
10 : USD 1.15
100 : USD 0.8602
500 : USD 0.721
1000 : USD 0.6877
3000 : USD 0.6612
9000 : USD 0.6601

   
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We are delighted to provide the SI7423DN-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7423DN-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7423DN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.018 at V = - 10 V - 11.7 GS TrenchFET Power MOSFET - 30 0.030 at V = - 4.5 V - 9.0 GS New PowerPAK Package - Low Thermal Resistance, R thJC - Low 1.07 mm Profile APPLICATIONS PowerPAK 1212-8 Battery Switch S S 3.30 mm 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7423DN-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si7423DN-T1-GE3 (Lead (Pb)-free) and Halogen-free ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 11.7 - 7.4 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 8.4 - 5.4 A A I Pulsed Drain Current - 30 DM a I - 3.2 - 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 85 C 2.0 0.8 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 26 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R 1.9 2.4 Maximum Junction-to-Case Steady State thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72582 www.vishay.com S-83051-Rev. C, 29-Dec-08 1Si7423DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 85 C - 5 DS GS J a I V - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 11.7 A 0.014 0.018 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 9.0 A 0.023 0.030 GS D a g V = - 15 V, I = - 11.7 A 29 S Forward Transconductance fs DS D a V I = - 3.2 A, V = 0 V - 0.76 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 37.5 56 g Q V = - 15 V, V = - 10 V, I = - 11.7 A Gate-Source Charge 5.8 nC gs DS GS D Gate-Drain Charge Q 9.6 gd R Gate Resistance f = 1 MHz 5 g Turn-On Delay Time t 11 20 d(on) t Rise Time V = - 15 V, R = 15 10 15 r DD L I - 1 A, V = - 10 V, R = 6 Turn-Off Delay Time t 74 110 ns D GEN g d(off) t Fall Time 50 75 f Source-Drain Reverse Recovery Time t I = - 3.2 A, dI/dt = 100 A/s 30 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 30 V = 10 thru 4 V GS 25 25 20 20 15 15 3 V 10 10 T = 125 C C 5 5 25 C - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1234 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72582 2 S-83051-Rev. C, 29-Dec-08 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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