Si7380ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.003 at V = 10 V 40 GS PWM Optimized COMPLIANT 30 54 nC 0.0035 at V = 4.5 V 40 GS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested g PowerPAK SO-8 APPLICATIONS DC/DC Converters S 6.15 mm 5.15 mm 1 - Low-Side MOSFET in Synchronous Buck in Desktops S 2 S Secondary Synchronous Rectifier D 3 G 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7380ADP-T1-E3 (Lead (Pb)-free) Si7380ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 12 GS T = 25 C 40 C T = 70 C 32 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 31 b, c T = 70 C A A 25 I Pulsed Drain Current 70 DM T = 25 C 40 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.9 T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.4 b, c T = 70 C A 3.4 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 18 23 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (Si7380ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 37 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T 4.3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.6 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0024 0.003 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0027 0.0035 GS D a g V = 15 V, I = 20 A 150 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 7785 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 780 pF oss DS GS C Reverse Transfer Capacitance 335 rss V = 15 V, V = 10 V, I = 15 A 122 185 DS GS D Q Total Gate Charge g 54 85 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 15 A 14.5 gs DS GS D Q Gate-Drain Charge 8 gd R Gate Resistance f = 1 MHz 0.5 1.0 1.5 g t Turn-On Delay Time 17 25 d(on) t Rise Time V = 15 V, R = 15 13 20 r DD L ns I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 155 235 d(off) Fall Time t 35 55 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 40 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.68 1.1 V SD S t Body Diode Reverse Recovery Time 45 70 ns rr Body Diode Reverse Recovery Charge Q 52 80 nC rr I = 3 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 22 a ns Reverse Recovery Rise Time t 23 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73408 2 S-80439-Rev. B, 03-Mar-08