New Product Si7405BDN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET a 0.013 at V = - 4.5 V - 16 GS RoHS a - 12 0.017 at V = - 2.5 V 46 nC GS - 16 COMPLIANT APPLICATIONS a 0.024 at V = - 1.8 V GS - 16 Load Switch, PA Switch and Power Switch for Portable Devices PowerPAK 1212-8 S 3.30 mm 3.30 mm S 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7405BDN-T1-E3 (Lead (Pb)-free) Si7405BDN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 12 DS V V Gate-Source Voltage 8 GS a T = 25 C C - 16 a T = 70 C - 16 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 13.5 A b, c T = 70 C A - 11 A Pulsed Drain Current I - 40 DM a T = 25 C - 16 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 3 A T = 25 C 33 C T = 70 C 21 C P Maximum Power Dissipation W D b, c T = 25 C 3.6 A b, c T = 70 C 2.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 28 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 2.9 3.8 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7405BDN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 10 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 13.5 A 0.009 0.013 GS D a R V = - 2.5 V, I = - 12 A 0.012 0.017 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 4.2 A 0.016 0.024 GS D a g V = - 6 V, I = - 13.5 A 55 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3500 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 910 pF oss DS GS C Reverse Transfer Capacitance 860 rss V = - 6 V, V = - 8 V, I = - 10 A 75 115 DS GS D Q Total Gate Charge g 46 70 nC Q Gate-Source Charge V = - 6 V, V = - 4.5 V, I = - 10 A 4.5 gs DS GS D Q Gate-Drain Charge 14 gd R Gate Resistance f = 1 MHz 3 g t Turn-On Delay Time 22 35 d(on) t Rise Time V = - 6 V, R = 0.6 60 90 r DD L I - 10 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 80 120 D GEN g d(off) t Fall Time 45 70 f ns Turn-On Delay Time t 12 20 d(on) t Rise Time V = - 6 V, R = 0.6 15 25 r DD L I - 10 A, V = - 8 V, R = 1 Turn-Off Delay Time t 75 115 D GEN g d(off) t Fall Time 45 70 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 12 S C A I Pulse Diode Forward Current 30 SM V I = - 10 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 50 75 ns rr Q Body Diode Reverse Recovery Charge 30 45 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 20 a ns t Reverse Recovery Rise Time 30 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69941 2 S-81549-Rev. B, 07-Jul-08