X-On Electronics has gained recognition as a prominent supplier of SI7415DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7415DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7415DN-T1-GE3 Vishay

Hot SI7415DN-T1-GE3 electronic component of Vishay
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Part No.SI7415DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 5.7A 3.8W 65mohm @ 10V
Datasheet: SI7415DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2747 ea
Line Total: USD 1.27 
Availability - 30
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.845

30
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.2747
10 : USD 1.0458
30 : USD 0.9218
100 : USD 0.7787
500 : USD 0.7157
1000 : USD 0.687

50270
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.892
10 : USD 1.309
100 : USD 1.0285
250 : USD 0.9152
500 : USD 0.8943
1000 : USD 0.8151
3000 : USD 0.8151
6000 : USD 0.8074
9000 : USD 0.7832

   
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We are delighted to provide the SI7415DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7415DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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3.3 mm Si7415DN www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PowerPAK 1212-8 Single D TrenchFET power MOSFET D 8 D 7 Fast switching D 6 5 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 11 APPLICATIONS S 2 SS 3 S Load switches 4 S 1 G Half-bridge motor drives Top View Bottom View High voltage non-synchronous G buck converters PRODUCT SUMMARY V (V) -60 DS R max. ( ) at V = -10 V 0.065 DS(on) GS D R max. ( ) at V = -4.5 V 0.110 DS(on) GS Q typ. (nC) 15 g P-Channel MOSFET I (A) -5.7 D Configuration Single ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free and halogen-free Si7415DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS T = 25 C -5.7 A a Continuous drain current (T = 150 C) I J D T = 70 C -4.6 A A Pulsed drain current (t = 100 s) I -30 DM a Continuous source-drain diode current I -3.2 S T = 25 C 3.8 A a Maximum power dissipation P W D T = 70 C 2.0 A Operating junction and storage temperature range T , T -55 to +150 J stg C b, c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 10 s 26 33 a Maximum junction-to-ambient R thJA Steady state 65 81 C/W Maximum junction-to-case (drain) Steady state R 1.9 2.4 thJC Notes a. Surface mounted on 1 x 1 FR4 board, t = 10 s b. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S20-0830-Rev. G, 26-Oct-2020 Document Number: 71691 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mmSi7415DN www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Gate-source threshold voltage V V = V , I = -250 A -1 - -3 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = -60 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -60 V, V = 0 V, T = 70 C - - -5 DS GS J a On-state drain current I V -5 V, V = -10 V -20 - - A D(on) DS GS V = -10 V, I = -5.7 A - 0.054 0.065 GS D a Drain-source on-state resistance R DS(on) V = -4.5 V, I = -4.4 A - 0.090 0.110 GS D a Forward transconductance g V = -15 V, I = -5.7 A - 11 - S fs DS D a Diode forward voltage V V = 0 V, I = -3.2 A - -0.8 -1.2 V SD GS D b Dynamic Total gate charge Q -15 25 g Gate-source charge Q V = -30 V, V = -10 V, I = -5.7 A -4 - nC gs DS GS D Gate-drain charge Q -3.2 - gd Turn-on delay time t -12 20 d(on) Rise time t -12 20 r V = -30 V, R = 30 , I -1 A, DD L D V = -10 V, R = 6 Turn-off delay time t GEN g -22 35 ns d(off) Fall time t -16 25 f Source-drain reverse recovery time t I = -3.2 A, di/dt = 100 A/s - 45 90 rr F Notes d. Pulse test pulse width 300 s, duty cycle 2 % e. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0830-Rev. G, 26-Oct-2020 Document Number: 71691 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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