Si7336ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available V (V) R ()I (A) Q (Typ.) DS DS(on) D g Ultra-Low On-Resistance Using High RoHS 0.0030 at V = 10 V 30 GS Density TrenchFET Gen II Power COMPLIANT 30 36 MOSFET Technology 0.0040 at V = 4.5 V 27 GS Q Optimized g New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested g 100 % UIS Tested PowerP AK SO-8 APPLICATIONS Low-Side DC/DC Conversion - Notebook S 6.15 mm 5.15 mm - Server 1 S 2 - Workstation S 3 G 4 D D 8 D 7 D 6 D G 5 Bottom V i e w S Ordering Information: Si7336ADP-T1-E3 (Lead (Pb)-free) Si7336ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limits Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS T = 25 C 30 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 25 A I A Pulsed Drain Current (10 s Pulse Width) 70 DM a I 4.5 Continuous Source Current (Diode Conduction) S L = 0.1 mH I Avalanche Current 50 AS T = 25 C 5.4 A a P W Maximum Power Dissipation D T = 70 C 3.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 18 23 a R Maximum Junction-to-Ambient thJA Steady State 50 65 C/W R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile ( Si7336ADP Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 25 A 0.0024 0.0030 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 19 A 0.0031 0.0040 GS D a g V = 15 V, I = 25 A 110 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.72 1.1 V Diode Forward Voltage SD S GS b Dynamic Input Capacitance C 5600 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 860 pF oss DS GS Reverse Transfer Capacitance C 415 rss Q Total Gate Charge 36 50 g Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 20 A 18 nC gs DS GS D Q Gate-Drain Charge 10 gd Gate Resistance R 0.6 1.3 2.0 g t Turn-On Delay Time 24 35 d(on) Rise Time t 16 25 r V = 15 V, R = 15 DD L I 1.0 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN G 90 140 ns d(off) t Fall Time 32 50 f t I = 2.9 A, di/dt = 100 A/s Source-Drain Reverse Recovery Time 45 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 thru 4 V GS 50 50 40 40 30 30 20 20 T = 125 C C 10 10 25 C 3 V - 55 C 0 0 0 2468 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73152 2 S-80440-Rev. F, 03-Mar-08 I - Drain Current (A) D I - Drain Current (A) D