Si7374DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.0055 at V = 10 V 24 GS TrenchFET Power MOSFET 30 36 nC 0.0066 at V = 4.5 V 24 GS 100 % R Tested g SCHOTTKY PRODUCT SUMMARY APPLICATIONS V (V) SD V (V) I (A) DC/DC Conversion DS F Diode Forward Voltage - CPU Core Low Side 30 0.39 V at 1.0 A 2.0 - Secondary Synchronous Rectification PowerPAK SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D 8 D Schottky Diode 7 D G 6 D 5 N-Channel MOSFET Bottom View Ordering Information: Si7374DP-T1-E3 (Lead (Pb)-free) S Si7374DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C C 24 a T = 70 C C 24 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 23.8 b, c T = 70 C A A 19 Pulsed Drain Current I 100 DM a T = 25 C C 24 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.2 T = 25 C 56 C T = 70 C 36 C P Maximum Power Dissipation W D b, c T = 25 C A 5 b, c T = 70 C A 3.2 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 20 25 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.7 2.2 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc 73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 68 C/W. Document Number: 73560 www.vishay.com S-83039-Rev. B, 29-Dec-08 1Si7374DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 30 V DS GS D V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 500 A DS GS Zero Gate Voltage Drain Current I DSS V = 30 V, V = 0 V, T = 55 C mA 10 DS GS J a I V 5 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 23.8 A 0.0046 0.0055 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 21.8 A 0.0055 0.0066 GS D a g V = 15 V, I = 23.8 A Forward Transconductance 95 S fs DS D b Dynamic C Input Capacitance 5500 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 870 pF oss DS GS Reverse Transfer Capacitance C 360 rss V = 15 V, V = 10 V, I = 20 A 81 122 DS GS D Q Total Gate Charge g 38 57 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 20 A 18 gs DS GS D Q Gate-Drain Charge 11 gd Gate Resistance R f = 1 MHz 0.95 1.4 g t Turn-On Delay Time 40 60 d(on) Rise Time t 160 240 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 15 25 d(on) t Rise Time V = 15 V, R = 1.5 15 25 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 42 65 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Current 24 S C A Pulse Forward Diode Current I 100 SM I = 1 A 0.35 0.39 F V Forward Voltage Drop (Schottky Diode) V F I = 1 A, T = 150 C 0.27 0.31 F J V = 30 V 0.07 0.5 r Maximal Reverse Leakage Current I V = 30 V, T = 100 C 3.5 10 mA rm r J (Schottky Diode) V = 30 V, T = 125 C 10 100 r J Junction Capacitance (Schottky Diode) C V = 10 V pF 58 T r Body Diode Reverse Recovery Time t 45 70 ns rr Q Body Diode Reverse Recovery Charge 39 60 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 20 a ns t Reverse Recovery Rise Time 25 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73560 2 S-83039-Rev. B, 29-Dec-08