DMN1250UFEL
N-CHANNEL ENHANCEMENT MODE MOSFET
Features Mechanical Data
Low Gate Charge Case: U-QFN1515-12
R : 280m @ V = 4.5V (Single MOSFET) Case MaterialMolded Plastic, Green Molding
DS(ON) GS
8 N-Channel MOSFET in One Package Compound. UL Flammability Classification Rating 94V-0
Common Source Moisture Sensitivity: Level 1 per J-STD-020
Small Footprint 1.5mm 1.5mm Terminals: FinishMatte Tin Annealed over Copper Leadframe.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208
Halogen and Antimony Free. Green Device (Note 3) Terminal Connections: See Diagram
Qualified to AEC-Q101 Standards for High Reliability Weight: 0.004 grams (Approximate)
U-QFN1515-12
D8
D7
S
D6
S
D5
S
D1
D2
S
D3
G
D4
Bottom View Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN1250UFEL-7 U-QFN1515-12 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
DMN1250UFEL
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 12 V
DSS
Gate-Source Voltage V 8 V
GSS
Drain Current (Note 6) Continuous T = +25C 2.0
A
A
I
D
1.6
T = +70C
A
Pulsed Drain Current (Note 7) 10 A
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 0.66 W
P
D
Total Power Dissipation (Note 6) 1.25 W
P
D
Thermal Resistance, Junction to Ambient (Note 5) R 177 C/W
JA
Thermal Resistance, Junction to Ambient (Note 6) R 100 C/W
JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Notes: 5. Device mounted on 1" 1", FR-4 PC board with minimum recommended pad layout, and test with single MOSFET.
6. Device mounted on 1" 1", FR-4 PC board with 2 oz. copper, and test with single MOSFET.
7. Repetitive Rating, pulse width limited by junction temperature, and test with single MOSFET.
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage BV 12 V I = 250A, V = 0V
DSS D GS
Zero Gate Voltage Drain Current I 1 A V = 12V, V = 0V
DSS DS GS
Gate-Body Leakage Current I 100 nA V = 0V, V = 8V
GSS DS GS
Gate Threshold Voltage V 0.4 1 V V = V , I = 250A
GS(TH) DS GS D
280 450 m
V = 4.5V, I = 0.2A
GS D
Static Drain-Source On-Resistance (Note 8) R
DS(ON)
360 550 m
V = 2.5V, I = 0.1A
GS D
Forward Transfer Admittance 1 S
|YFS| VDS = 6V, ID = 0.2A
Diode Forward Voltage (Note 8) V 0.8 1.0 V I = 0.2A, V = 0V
SD S GS
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 146 190 pF
C
iss
V = 6V, V = 0V
DS GS
Output Capacitance 10 15 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 8 13 pF
C
rss
Gate Resistance 2.4 = 0V, V = 0V, f = 1MHz
RG VGS DS
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge Q 1.3 1.9 nC
g
Gate-Source Charge 0.3 nC
Q V = 4.5V, V = 6V, I =0.2A
gs GS DS D
Gate-Drain Charge 0.1 nC
Q
gd
Turn-On Delay Time t 1.9 2.7 nS
D(ON)
Turn-On Rise Time 1.3 nS
t V = 6V, V = 4.5V,
R DD GS
Turn-Off Delay Time t 7.5 11 nS R = 22, R = 6
D(OFF) L G
Turn-Off Fall Time t 1.0 nS
F
Notes: 8. Test pulse width t = 300ms, test with single MOSFET.
9. Guaranteed by design with single MOSFET, not subject to production testing.
2 of 7
August 2018
DMN1250UFEL
Diodes Incorporated
www.diodes.com
Document number: DS37787 Rev. 4 - 2