DMN2005UPS Green 20V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features I D Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency 4.6m V = 4.5V 100A GS Low RDS(ON) Minimizes On State Losses 20V 8.7m V = 2.5V 80A GS Low Input Capacitance Fast Switching Speed <1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and Description manufactured in IATF 16949 certified facilities), please refer This new generation N-Channel Enhancement Mode MOSFET has to the related automotive grade (Q-suffix) part. A listing can been designed to minimize R yet maintain superior switching DS(ON) be found at performance. This device is ideal for use in Notebook battery power DMN2005UPS Marking Information D D D D = Manufacturers Marking N2005US = Product Type Marking Code YYWW = Date Code Marking N2005US YY = Last Two Digits of Year (ex: 20 = 2020) WW = Week Code (01 to 53) YY WW S S S G Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage 12 V VGSS Steady TA = +25C 20 A Continuous Drain Current (Note 6) VGS = 10V ID State 15 TA = +70C Steady T = +25C 100 C Continuous Drain Current (Note 6) V = 10V I A GS D State 88 T = +70C C 150 Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) A IDM Maximum Continuous Body Diode Forward Current (Mounted on Infinite Heatsink) 150 A IS Avalanche Current (Note 7) L=0.2mH 36 A IAS Avalanche Energy (Note 7) L=0.2mH 133 mJ EAS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.5 W P D Steady state 98 Thermal Resistance, Junction to Ambient (Note 5) C/W RJA t<10s 83 Total Power Dissipation (Note 6) P 2.5 W D Steady state 51 Thermal Resistance, Junction to Ambient (Note 6) RJA t<10s 43 C/W Thermal Resistance, Junction to Case 1.5 RJC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. 2 of 8 DMN2005UPS October 2020 Diodes Incorporated www.diodes.com Document number: DS37844 Rev. 3 - 2 ADVANCED INFORMATION