DMT4011LFG
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
Low R Ensures On State Losses Are Minimized
DS(ON)
I max
D
Excellent Q R Product (FOM)
gd x DS(ON)
BV R max
DSS DS(ON)
T = +25C
C
Advanced Technology for DC-DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
11.5m @ V = 10V 30A
GS
Density End Products
40V
17.8m @ V = 4.5V 24A 100% UIS (Avalanche) Rated
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Mechanical Data
Description and Applications
Case: PowerDI3333-8
This MOSFET is designed to minimize the on-state resistance
Case Material: Molded Plastic,Gree Molding Compound.
(R ) and yet maintain superior switching performance, making it
DS(ON)
UL Flammability Classification Rating 94V-0
ideal for high-efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Backlighting
Solderable per MIL-STD-202, Method 208
Power Management Functions
Weight: 0.008 grams (Approximate)
DC-DC Converters
PowerDI3333-8
D
Pin 1
S
S
8
1
S
G
7
2
G
6
3
D
D
5
4
D
S
D
Top View
Top View Bottom View Equivalent Circuit
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMT4011LFG-7 2,000/Tape & Reel
PowerDI3333-8
DMT4011LFG-13 3,000/Tape & Reel
PowerDI3333-8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT4011LFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
+20
Gate-Source Voltage V V
GSS
-16
T = +25C 30
C
A
Continuous Drain Current (Note 5) VGS = 10V ID
24
T = +70C
C
T = +25C 10.8
A
A
Continuous Drain Current (Note 5) V = 10V I
GS D
8.6
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 5) I 2.1 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 65 A
DM
Avalanche Current, L=0.3mH I 11.9 A
AS
Avalanche Energy, L=0.3mH 21.4 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) T = +25C P 2 W
A D
Thermal Resistance, Junction to Ambient (Note 5) 62 C/W
R
JA
Total Power Dissipation (Note 5) 15.6 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 5) 8 C/W
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV 40 - - V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I - - 1 A V = 32V, V = 0V
DSS DS GS
100 V = +20V, V = 0V
GS DS
Gate-Source Leakage I - - nA
GSS
-100
V = -16V, V = 0V
GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage 1 - 3 V
V V = V , I = 250A
GS(TH) DS GS D
- 9.2 11.5
V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
- 13.4 17.8
V = 4.5V, I = 20A
GS D
Diode Forward Voltage - - 1.2 V
V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance - 767 -
C
iss
VDS = 20V, VGS = 0V,
238
Output Capacitance C - - pF
oss
f = 1MHz
30.6
Reverse Transfer Capacitance C - -
rss
1
Gate Resistance R - - V = 0V, V = 0V, f = 1MHz
g DS GS
7
Total Gate Charge (V = 4.5V) Q - -
GS g
15.1
- -
Total Gate Charge (VGS = 10V) Qg
nC V = 20V, I = 20A
DS D
2.1
Gate-Source Charge - -
Q
gs
Gate-Drain Charge - 3.2 -
Q
gd
Turn-On Delay Time - 3.5 -
t
D(ON)
Turn-On Rise Time - 5.8 -
t V = 20V, V = 10V,
R DD GS
ns
Turn-Off Delay Time - 9.6 -
t R = 1.6, I = 20A
D(OFF) G D
2
Turn-Off Fall Time t - -
F
- 9.8 -
Body Diode Reverse Recovery Time t ns
RR
I = 15A, di/dt = 400A/s
F
- 5.1 -
Body Diode Reverse Recovery Charge Q nC
RR
Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. R is guaranteed by design
JA JC
while RJA is determined by the users board design.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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DMT4011LFG October 2016
Diodes Incorporated
www.diodes.com
Document number: DS37919 Rev. 3 - 2