X-On Electronics has gained recognition as a prominent supplier of SI7390DP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7390DP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7390DP-T1-E3 Vishay

SI7390DP-T1-E3 electronic component of Vishay
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Part No.SI7390DP-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Datasheet: SI7390DP-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 1.757
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 1.7402
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.5529
10 : USD 2.5548
100 : USD 2.0781
500 : USD 1.6808
1000 : USD 1.4339
3000 : USD 1.3517
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 3.3422
N/A

Obsolete
0
MOQ : 6
Multiples : 1
6 : USD 1.2065
10 : USD 1.1528
25 : USD 1.1475
100 : USD 1.1421
250 : USD 1.1192
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI7390DP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7390DP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm Si7390DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES PowerPAK SO-8 Single D Extremely low Q for low switching losses gd D 8 D 7 TrenchFET power MOSFET D 6 New low thermal resistance PowerPAK 5 package with low 1.07 mm profile Available 100 % R tested g Material categorization: for definitions of compliance 1 2 S please see www.vishay.com/doc 99912 3 S 4 S 1 APPLICATIONS G Top View Bottom View D High-side DC/DC conversion - Notebook - Server PRODUCT SUMMARY - Workstation G V (V) 30 DS Point-of-load conversion R max. ( ) at V = 10 V 0.0095 DS(on) GS R max. () at V = 4.5 V 0.0135 DS(on) GS S Q typ. (nC) 10 g N-Channel MOSFET I (A) 15 D Configuration Single ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free Si7390DP-T1-E3 Lead (Pb)-free and halogen-free Si7390DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-source voltage V 30 30 DS V Gate-source voltage V 20 20 GS T = 25 C 15 9 A a Continuous drain current (T = 150 C) I J D T = 70 C 12 7 A A Pulsed drain current I 50 DM a Continuous source current (diode conduction) I 4.1 1.5 S T = 25 C 51.8 A a Maximum power dissipation P W D T = 70 C 3.2 1.1 A Operating junction and storage temperature range T , T -55 to +150 J stg C b, c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 10 s 20 25 a Maximum junction-to-ambient (MOSFET) R thJA Steady state 53 70 C/W Maximum junction-to-case (drain) Steady state R 2.1 3.2 thJC Notes a. Surface mounted on 1 x 1 FR4 board b. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-1748-Rev. F, 27-Nov-17 Document Number: 72214 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mm Si7390DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 30 - - DS GS D V Gate threshold voltage V V = V , I = 250 A 0.8 - 3 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 30 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 30 V, V = 0 V, T = 70 C - - 5 DS GS J a On-state drain current I V 5 V, V = 10 V 40 - - A D(on) DS GS V = 10 V, I = 15 A - 0.0075 0.0095 GS D a Drain-source on-state resistance R DS(on) V = 4.5 V, I = 13 A - 0.0105 0.0135 GS D a Forward transconductance g V = 15 V, I = 15 A - 45 - S fs DS D a Diode forward voltage V I = 4.1 A, V = 0 V - 0.7 1.1 V SD S GS b Dynamic Total gate charge Q -10 15 g Gate-source charge Q V = 15 V, V = 4.5 V, I = 15 A -3.5 - nC gs DS GS D Gate-drain charge Q -2.1 - gd Gate resistance R 0.2 0.8 1.4 g Turn-on delay time t -16 30 d(on) Rise time t -7 12 r V = 15 V, R = 15 DD L I 1 A, V = 10 V, R = 6 D GEN g Turn-off delay time t -43 70 ns d(off) Fall time t -14 25 f Source-drain reverse recovery time t I = 2.7 A, di/dt = 100 A/s - 35 60 rr F Notes a. Pulse test: pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1748-Rev. F, 27-Nov-17 Document Number: 72214 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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