DMP2005UFG Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features Low R ensures on state losses are minimized DS(ON) I max D BV R max DSS DS(ON) Small form factor, thermally efficient package enables higher T = +25C C density end products (PowerDI ) 4.0m V = -4.5V -89A GS Occupies just 33% of the board area occupied by SO-8 enabling -20V 6.5m V = -2.5V -70A GS smaller end product Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high-efficiency power management applications. Case: PowerDI3333-8 Case Material: Molded Plastic,Gree Molding Compound. Applications UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram Terminal Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP2005UFG-7 PowerDI3333-8 2,000/Tape & Reel DMP2005UFG-13 PowerDI3333-8 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP2005UFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage 10 V V GSS Steady T = +25C -89 C Continuous Drain Current V = -4.5V (Note 7) I A GS D State -70 T = +70C C Steady TA = +25C -19 A Continuous Drain Current V = -4.5V (Note 6) I GS D State -15 T = +70C A Pulsed Drain Current (380s pulse, duty cycle = 1%) -100 A I DM Maximum Continuous Body Diode Forward Current (Note 6) I -2.5 A S Avalanche Current (Note 8) L = 0.1mH I -27 A AS Avalanche Energy (Note 8) L = 0.1mH E 35 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation T = +25C P 1.0 W A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 128 C/W R JA Total Power Dissipation T = +25C P W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State C/W R JA Total Power Dissipation (Note 7) T = +25C P W C D Thermal Resistance, Junction to Case (Note 7) C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -0.3 -0.7 -0.9 V V = V , I = -250A GS(TH) DS GS D 3.5 4.0 V = -4.5V, I = -15A GS D Static Drain-Source On-Resistance 5.4 6.5 m R V = -2.5V, I = -10A DS(ON) GS D 8.0 14 V = -1.8V, I = -1A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -10A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 4,670 C iss V = -10V, V = 0V DS GS Output Capacitance 650 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 550 rss Gate Resistance R 3.5 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = -4.5V) Q 55 GS g Total Gate Charge (V = -10V) Q 125 GS g nC V = -10V, I = -20A DD D Gate-Source Charge Q 7.8 gs Gate-Drain Charge Q 16.5 gd Turn-On Delay Time 9.5 t D(ON) Turn-On Rise Time 10.5 t V = -4.5V, V = -10V, R GS DD ns Turn-Off Delay Time 115 R = 1, R = 1 I = -10A t G G D D(OFF) Turn-Off Fall Time 85 t F Reverse Recovery Time t 25 ns I = -10A, di/dt = 100A/s RR F Reverse Recovery Charge Q 14 nC I = -10A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2005UFG November 2016 Diodes Incorporated www.diodes.com Document number: DS38932 Rev. 2 - 2