New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) DS DS(on) I (A) g D TrenchFET Power MOSFET 0.0093 at V = 10 V 25 GS PWM Optimized 30 8.2 0.0124 at V = 4.5 V 25 GS APPLICATIONS System Power DC/DC PowerPAK SO-8 D D 1 2 S1 5.15 mm 6.15 mm 1 G1 2 S2 3 G2 4 D1 8 D1 G G 1 2 7 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7272DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V 30 Drain-Source Voltage DS V V Gate-Source Voltage 20 GS a T = 25 C 25 C a T = 70 C C 25 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 15 A b, c T = 70 C A 12 A I Pulsed Drain Current 60 DM T = 25 C 19 C I Source-Drain Current Diode Current S b, c T = 25 C 3.0 A T = 25 C 22 C T = 70 C 14 C P Maximum Power Dissipation W D b, c T = 25 C A 3.6 b, c T = 70 C 2.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Typ. Max. Parameter Symbol Unit b, f t 10 s R 26 35 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 45.5 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 C/W. Document Number: 69026 www.vishay.com S09-0269-Rev. B, 16-Feb-09 1New Product Si7272DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T I = 250 A 28 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A - 5.6 GS(th) GS(th) J D V V = V , I = 250 A Gate Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 85 C 10 DS GS J b I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0076 0.0093 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 13 A 0.0103 0.0124 GS D b g V = 10 V, I = 15 A 45 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 1100 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 200 pF oss DS GS C Reverse Transfer Capacitance 90 rss V = 15 V, V = 10 V, I = 15 A 17 26 DS GS D Total Gate Charge Q g 8.2 13 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 15 A 3.2 gs DS GS D Gate-Drain Charge Q 2.7 gd R Gate Resistance f = 1 MHz 3.5 7 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 15 V, R = 1.5 15 25 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 22 35 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 15 V, R = 1.5 10 15 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 22 35 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 13 S C A a I 30 Pulse Diode Forward Current SM Body Diode Voltage V I = 10 A 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 20 30 ns rr Body Diode Reverse Recovery Charge Q 15 25 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 11 a ns Reverse Recovery Rise Time t 9 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69026 2 S09-0269-Rev. B, 16-Feb-09