Si7218DN Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.025 at V = 10 V 24 GS TrenchFET Power MOSFET 30 5 nC 0.033 at V = 4.5 V 21 GS APPLICATIONS Synchronous Rectification PowerPAK 1212-8 Notebook System Power POL S1 3.30 mm 3.30 mm 1 G1 D D 1 2 2 S2 3 G2 4 D1 8 D1 7 G G 1 2 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7218DN-T1-E3 (Lead (Pb)-free) Si7218DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 24 C T = 70 C 19 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 8 A a, b T = 70 C 6.5 A A Pulsed Drain Current I 35 DM T = 25 C 19 C Continuous Source-Drain Diode Current I S a, b T = 25 C 2.2 A Single Pulse Avalanche Current I 10 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ AS 5 T = 25 C 23 C T = 70 C 14.8 C Maximum Power Dissipation P W D a, b T = 25 C 2.6 A a, b T = 70 C 1.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e Maximum Junction-to-Ambient t 10 s R 38 48 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 4.3 5.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under steady state conditions is 94 C/W. f. Based on T = 25 C. C Document Number: 73958 www.vishay.com S-83044-Rev. C, 22-Dec-08 1Si7218DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 35 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 6 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.5 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V On-State Drain Current 20 A D(on) DS GS V = 10 V, I = 8 A 0.0205 0.025 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.027 0.033 GS D a Forward Transconductance g V = 15 V, I = 8 A 20 S fs DS D b Dynamic C Input Capacitance 700 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 110 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = 15 V, V = 10 V, I = 8 A 11 17 DS GS D Total Gate Charge Q g 57.5 nC Q Gate-Source Charge 2.3 gs V = 15 V, V = 4.5 V, I = 8 A DS GS D Gate-Drain Charge Q 1.6 gd R Gate Resistance f = 1 MHz 2.3 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = 15 V, R = 2.3 12 20 r DD L I 6.5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 10 15 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 10 15 d(on) t Rise Time V = 15 V, R = 2.3 10 15 r DD L I 6.5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I Continuous Source-Drain Diode Current T = 25 C 19 S C A I Pulse Diode Forward Current 35 SM V I = 6.5 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 25 40 ns rr Q Body Diode Reverse Recovery Charge 19 30 nC rr I = 6.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 14 a ns t Reverse Recovery Rise Time 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73958 2 S-83044-Rev. C, 22-Dec-08