X-On Electronics has gained recognition as a prominent supplier of SI7234DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7234DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7234DP-T1-GE3 Vishay

SI7234DP-T1-GE3 electronic component of Vishay
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Part No.SI7234DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 12V 60A 46W Surface Mount PowerPAK® SO-8 Dual
Datasheet: SI7234DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.829 ea
Line Total: USD 2.83 
Availability - 20999
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2667
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 3.627
10 : USD 2.8821
25 : USD 2.8405
100 : USD 2.0696
250 : USD 2.0488
500 : USD 1.7836
1000 : USD 1.7667

20999
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.829
10 : USD 2.2655
25 : USD 2.2425
100 : USD 1.748
250 : USD 1.725
500 : USD 1.587
1000 : USD 1.541
3000 : USD 1.5065
6000 : USD 1.4835

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 2.1276

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.8625

2667
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 1
5 : USD 1.7667

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI7234DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7234DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si7234DP Vishay Siliconix Dual N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0034 at V = 4.5 V 60 GS COMPLIANT 12 37 nC APPLICATIONS 0.005 at V = 2.5 V 60 GS Synchronous Rectification DC-DC Point-of-Load PowerPAK SO-8 S1 5.15 mm 6.15 mm D D 1 1 2 G1 2 S2 3 G2 4 D1 8 D1 G G 1 2 7 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7234DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 12 DS V Gate-Source Voltage V 12 GS a T = 25 C 60 C a T = 85 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 24.8 A b, c T = 85 C A 20 A Pulsed Drain Current I 80 DM T = 25 C 38 C Continuous Source-Drain Diode Current I S b, c T = 25 C 2.9 A T = 25 C 46 C T = 85 C 29 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 85 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 26 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 2.2 2.7 thJC Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7234DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V /T V Temperature Coefficient 6 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 4.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 20 A D(on) DS GS V = 4.5 V, I = 20 A 0.0028 0.0034 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 20 A 0.004 0.005 GS D a g V = 6 V, I = 20 A Forward Transconductance 100 S fs DS D b Dynamic Input Capacitance C 5000 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 1500 pF oss DS GS Reverse Transfer Capacitance C 800 rss V = 6 V, V = 10 V, I = 20 A 80 120 DS GS D Q Total Gate Charge g 37 56 nC Gate-Source Charge Q 7.4 V = 6 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 7.2 gd Gate Resistance R f = 1 MHz 2.5 5 g t Turn-On Delay Time 30 45 d(on) t Rise Time V = 6 V, R = 0.6 15 25 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 90 135 d(off) t Fall Time 25 40 f ns t Turn-On Delay Time 15 25 d(on) t Rise Time V = 6 V, R = 0.6 10 15 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 50 75 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 60 S C A I Pulse Diode Forward Current 80 SM Body Diode Voltage V I = 10 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 40 60 ns rr Body Diode Reverse Recovery Charge Q 30 45 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 22 a ns Reverse Recovery Rise Time t 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68700 2 S-81219-Rev. A, 02-Jun-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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