New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.019 at V = 10 V 20 GS TrenchFET Gen III Power MOSFET 40 4.9 0.022 at V = 4.5 V 19 GS PWM Optimized 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SO-8 Backlight Inverter for LCD Displays DC/DC Converter S1 5.15 mm 6.15 mm D D 1 1 2 G1 2 S2 3 G2 4 D1 8 D1 G G 7 1 2 D2 6 D2 5 S S Bottom View 1 2 Ordering Information: Si7288DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V 40 Drain-Source Voltage DS V V Gate-Source Voltage 20 GS T = 25 C 20 C T = 70 C 17 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 10 A a, b T = 70 C 8.2 A A I 50 Pulsed Drain Current DM T = 25 C 13 C I Source-Drain Current Diode Current S a, b T = 25 C 3.0 A I 10 Single Pulse Avalanche Current AS L = 0.1 mH E 5 Avalanche Energy mJ AS 15.6 T = 25 C C 10 T = 70 C C P Maximum Power Dissipation W D a, b T = 25 C 3.6 A a, b T = 70 C 2.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit a, e t 10 s 29 35 R Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 6.5 8.0 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 80 C/W. Document Number: 65366 www.vishay.com S09-2113-Rev. A, 12-Oct-09 1New Product Si7288DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T I = 250 A 47 DS DS J D mV/C V Temperature Coefficient V /T I = 250 A - 5.2 GS(th) GS(th) J D V V = V , I = 250 A Gate Threshold Voltage 1.2 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 85 C 10 DS GS J b I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0156 0.019 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.018 0.022 GS D b g V = 10 V, I = 10 A 39 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 565 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 100 pF oss DS GS C Reverse Transfer Capacitance 42 rss V = 20 V, V = 10 V, I = 10 A 10 15 DS GS D Q Total Gate Charge g 4.9 7.4 nC Q Gate-Source Charge V = 20 V, V = 4.5 V, I = 10 A 1.4 gs DS GS D Q Gate-Drain Charge 1.5 gd R Gate Resistance f = 1 MHz 0.6 2.7 5.4 g t Turn-On Delay Time 12 24 d(on) t Rise Time V = 20 V, R = 2 14 28 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 16 32 d(off) Fall Time t 10 20 f ns t Turn-On Delay Time 714 d(on) Rise Time t 8 16 V = 20 V, R = 2 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 14 28 d(off) Fall Time t 8 16 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 13 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.77 1.2 V SD S t Body Diode Reverse Recovery Time 15 30 ns rr Body Diode Reverse Recovery Charge Q 7.5 15 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns Reverse Recovery Rise Time t 7 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65366 2 S09-2113-Rev. A, 12-Oct-09