New Product Si7322DN Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 100 % UIS Tested 100 0.058 at V = 10 V 18 13 nC RoHS GS COMPLIANT APPLICATIONS PowerPAK 1212-8 Primary Switch Isolated DC/DC Converters S 3.30 mm 3.30 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7322DN-T1-E3 (Lead (Pb)-free) Si7322DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 18 C a T = 70 C 16 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 5.5 A b, c T = 70 C 4.4 A A I Pulsed Drain Current 20 DM a T = 25 C 18 C Continuous Source-Drain Diode Current I S b, c T = 25 C 3.2 A Single Pulse Avalanche Current I 19 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 18 AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D b, c T = 25 C 3.8 A b, c T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 10 s R 26 33 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7322DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V /T V Temperature Coefficient 130 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 10 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 2.5 4.4 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS a R V = 10 V, I = 5.5 A Drain-Source On-State Resistance 0.048 0.058 DS(on) GS D a Forward Transconductance g V = 15 V, I = 5.5 A 10 S fs DS D b Dynamic C Input Capacitance 750 iss Output Capacitance C V = 50 V, V = 0 V, f = 1 MHz 80 pF oss DS GS C Reverse Transfer Capacitance 25 rss Total Gate Charge Q 13 20 g Q Gate-Source Charge V = 50 V, V = 10 V, I = 5.5 A 3.7 nC gs DS GS D Gate-Drain Charge Q 3 gd R Gate Resistance f = 1 MHz 1.3 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 50 V, R = 11.4 10 15 r DD L ns I 4.4 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 12 20 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 18 S C A I Pulse Diode Forward Current 20 SM V I = 4.4 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 40 60 ns rr Q Body Diode Reverse Recovery Charge 70 105 nC rr I = 4.4 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 30 a ns t Reverse Recovery Rise Time 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69638 2 S-81549-Rev. B, 07-Jul-08