New Product Si7224DN Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFETs a 0.035 at V = 10 V GS 6 Channel 1 30 4.5 nC RoHS a 0.042 at V = 4.5 V 6 GS COMPLIANT APPLICATIONS a 0.028 at V = 10 V 6 GS Notebook PC System Power Channel 2 30 5.5 nC a 0.035 at V = 4.5 V 6 GS Low Current POL PowerPAK 1212-8 D D 1 2 S1 3.30 mm 3.30 mm 1 G1 2 S2 3 G2 4 D1 G G 1 2 8 D1 7 D2 Bottom View 6 D2 5 S S 1 2 Ordering Information: Si7224DN-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si7224DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Channel 1Channel 2Unit V 30 30 Drain-Source Voltage DS V V 16 20 Gate-Source Voltage GS a a T = 25 C 6 C 6 a a T = 70 C 6 C 6 I Continuous Drain Current (T = 150 C) D J a, b, c a, b, c T = 25 C A 6 6 b, c b, c T = 70 C A A 5.2 5.9 I Pulsed Drain Current 25 30 DM a a T = 25 C 6 6 C I Source Drain Current Diode Current S b, c b, c T = 25 C A 1.7 2.2 T = 25 C 17.8 23 C T = 70 C 11.4 14.8 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2.5 2.6 b, c b, c T = 70 C A 1.6 1.7 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Channel 1 Channel 2 Typ. Max. Typ. Max. Parameter Symbol Unit b, f t 10 s R 40 50 38 48 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.6 7 4.3 5.4 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7224DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Ch 1 30 Drain-Source Breakdown Voltage V V = 0 V, I = 250 A V DS GS D Ch 2 30 Ch 1 37 V Temperature Coefficient V /T I = 250 A DS DS J D Ch 2 32 mV/C Ch 1 - 5 V Temperature Coefficient V /T I = 250 A GS(th) GS(th) J D Ch 2 - 6 Ch 1 1 2.2 Gate Threshold Voltage V V = V , I = 250 A V GS(th) DS GS D Ch 2 1.5 3 V = 0 V, V = 16 V Ch 1 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V Ch 2 100 DS GS Ch 1 1 V = 30 V, V = 0 V DS GS Ch 2 1 Zero Gate Voltage Drain Current I A DSS Ch 1 10 V = 30 V, V = 0 V, T = 55 C DS GS J Ch 2 10 Ch 1 15 b I V 5 V, V = 10 V A On-State Drain Current D(on) DS GS Ch 2 15 V = 10 V, I = 6.5 A Ch 1 0.027 0.035 GS D V = 10 V, I = 7.4 A Ch 2 0.022 0.028 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5.9 A Ch 1 0.032 0.042 GS D V = 4.5 V, I = 6.6 A Ch 2 0.029 0.035 GS D V = 15 V, I = 6.5 A Ch 1 22 DS D b g S Forward Transconductance fs V = 15 V, I = 7.4 A Ch 2 21 DS D a Dynamic Ch 1 570 Input Capacitance C iss Channel 1 Ch 2 720 V = 15 V, V = 0 V, f = 1 MHz DS GS Ch 1 80 Output Capacitance C pF oss Ch 2 115 Channel 2 Ch 1 35 V = 15 V, V = 0 V, f = 1 MHz DS GS Reverse Transfer Capacitance C rss Ch 2 50 V = 15 V, V = 10 V, I = 6.5 A Ch 1 9.5 14.5 DS GS D V = 10 V, V = 10 V, I = 7.4 A Ch 2 12 18 DS GS D Q Total Gate Charge g Ch 1 4.5 7 Channel 1 Ch 2 5.5 8.5 nC V = 10 V, V = 4.5 V, I = 6.5 A DS GS D Ch 1 1.5 Q Gate-Source Charge gs Ch 2 2.5 Channel 2 Ch 1 1.2 V = 10 V, V = 4.5 V, I = 7.4 A DS GS D Gate-Drain Charge Q gd Ch 2 1.7 Ch 1 3.3 Gate Resistance R f = 1 MHz g Ch 2 2.7 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. www.vishay.com Document Number: 69500 2 S-81549-Rev. B, 07-Jul-08