X-On Electronics has gained recognition as a prominent supplier of SI7430DP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7430DP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7430DP-T1-E3 Vishay

SI7430DP-T1-E3 electronic component of Vishay
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Part No.SI7430DP-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 150V 26A 64W 45mohm @ 10V
Datasheet: SI7430DP-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.313 ea
Line Total: USD 3939 
Availability - 5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.313

   
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RoHS - XON
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Minimum Operating Temperature
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Configuration
Series
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7430DP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7430DP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7430DP Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.045 at V = 10 V 26 Extremely Low Q for Reduced dV/dt, Q and GS gd gd 150 23 nC Shoot-Through 0.047 at V = 8 V 25 GS 100 % R Tested g 100 % UIS Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S 6.15 mm 5.15 mm 1 S Primary Side Switch D 2 S Single-Ended Power Switch 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free) Si7430DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 150 DS V V Gate-Source Voltage 20 GS T = 25 C 26 C T = 70 C 21 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 7.2 b, c T = 70 C A 5.7 A I Pulsed Drain Current 50 DM T = 25 C 32 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 20 AS T = 25 C 64 C T = 70 C 44 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.5 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. Document Number: 74282 www.vishay.com S11-0212-Rev. C, 14-Feb-11 1Si7430DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 150 V DS GS D V Temperature Coefficient V /T 172 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 10 GS(th) GS(th) J V V = V , I = 250 A 2.5 4.5 V Gate-Source Threshold Voltage GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 150 V, V = 0 V, T = 55 C 10 DS GS J a I V 10 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.036 0.045 GS D a R Drain-Source On-State Resistance DS(on) V = 8 V, I = 5 A 0.0375 0.047 GS D a g V = 15 V, I = 5 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1735 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 160 pF oss DS GS C Reverse Transfer Capacitance 37 rss V = 75 V, V = 10 V, I = 5 A 28.5 43 DS GS D Q Total Gate Charge g 23 35 nC Gate-Source Charge Q 8 gs V = 75 V, V = 8 V, I = 5 A DS GS D Q Gate-Drain Charge 6.5 gd Gate Resistance R f = 1 MHz 0.85 1.3 g t Turn-on Delay Time 14 21 d(on) Rise Time t 12 18 r V = 50 V, R = 10 DD L t Turn-Off Delay Time 22 33 d(off) I 5 A, V = 10 V, R = 1 D GEN g Fall Time t 610 f t Turn-On Delay Time 16 24 d(on) Rise Time t 12 18 r ns V = 50 V, R = 10 DD L t Turn-Off Delay Time 20 30 d(off) I 5 A, V = 8 V, R = 1 D GEN g t Fall Time 712 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 32 S C A a I 50 Pulse Diode Forward Current SM I = 3 A Body Diode Voltage V 0.77 1.2 V SD S t Body Diode Reverse Recovery Time 63 95 ns rr Q Body Diode Reverse Recovery Charge 110 165 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 49 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74282 2 S11-0212-Rev. C, 14-Feb-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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