Si7430DP Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.045 at V = 10 V 26 Extremely Low Q for Reduced dV/dt, Q and GS gd gd 150 23 nC Shoot-Through 0.047 at V = 8 V 25 GS 100 % R Tested g 100 % UIS Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S 6.15 mm 5.15 mm 1 S Primary Side Switch D 2 S Single-Ended Power Switch 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: Si7430DP-T1-E3 (Lead (Pb)-free) Si7430DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 150 DS V V Gate-Source Voltage 20 GS T = 25 C 26 C T = 70 C 21 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 7.2 b, c T = 70 C A 5.7 A I Pulsed Drain Current 50 DM T = 25 C 32 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 20 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 20 AS T = 25 C 64 C T = 70 C 44 C P Maximum Power Dissipation W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.5 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. Document Number: 74282 www.vishay.com S11-0212-Rev. C, 14-Feb-11 1Si7430DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 150 V DS GS D V Temperature Coefficient V /T 172 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 10 GS(th) GS(th) J V V = V , I = 250 A 2.5 4.5 V Gate-Source Threshold Voltage GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 150 V, V = 0 V, T = 55 C 10 DS GS J a I V 10 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.036 0.045 GS D a R Drain-Source On-State Resistance DS(on) V = 8 V, I = 5 A 0.0375 0.047 GS D a g V = 15 V, I = 5 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1735 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 160 pF oss DS GS C Reverse Transfer Capacitance 37 rss V = 75 V, V = 10 V, I = 5 A 28.5 43 DS GS D Q Total Gate Charge g 23 35 nC Gate-Source Charge Q 8 gs V = 75 V, V = 8 V, I = 5 A DS GS D Q Gate-Drain Charge 6.5 gd Gate Resistance R f = 1 MHz 0.85 1.3 g t Turn-on Delay Time 14 21 d(on) Rise Time t 12 18 r V = 50 V, R = 10 DD L t Turn-Off Delay Time 22 33 d(off) I 5 A, V = 10 V, R = 1 D GEN g Fall Time t 610 f t Turn-On Delay Time 16 24 d(on) Rise Time t 12 18 r ns V = 50 V, R = 10 DD L t Turn-Off Delay Time 20 30 d(off) I 5 A, V = 8 V, R = 1 D GEN g t Fall Time 712 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 32 S C A a I 50 Pulse Diode Forward Current SM I = 3 A Body Diode Voltage V 0.77 1.2 V SD S t Body Diode Reverse Recovery Time 63 95 ns rr Q Body Diode Reverse Recovery Charge 110 165 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 49 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74282 2 S11-0212-Rev. C, 14-Feb-11