X-On Electronics has gained recognition as a prominent supplier of SI7212DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7212DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7212DN-T1-GE3 Vishay

SI7212DN-T1-GE3 electronic component of Vishay
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Part No.SI7212DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 6.8A 2.6W 36mohm 10V
Datasheet: SI7212DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3225 ea
Line Total: USD 1.32 
Availability - 2798
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2798
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3225
10 : USD 1.0442
100 : USD 0.8453
250 : USD 0.8418
500 : USD 0.7624
1000 : USD 0.7463
3000 : USD 0.7429

1804
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 9
Multiples : 1
9 : USD 0.9413

2910
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.2778

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Configuration
Brand
Factory Pack Quantity :
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI7212DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7212DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si7212DN Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.036 at V = 10 V 6.8 GS 100 % R Tested 30 7 g 0.039 at V = 4.5 V 6.6 GS Space Savings Optimized for Fast Switching Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Rectification PowerPAK 1212-8 Intermediate Driver S1 3.30 mm 3.30 mm D D 1 1 2 G1 2 S2 3 G2 4 D1 8 D1 G G 1 2 7 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7212DN-T1-E3 (Lead (Pb)-free) N-Channel MOSFET N-Channel MOSFET Si7212DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 12 GS T = 25 C 6.8 4.9 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 4.9 3.5 A A I Pulsed Drain Current 20 DM a I 2.2 1.1 Continuous Source Current (Diode Conduction) S I Single Pulse Avalanche Current 10 A AS L = 0.1 mH Single Pulse Avalanche Energy E 5mJ AS T = 25 C 2.6 1.3 A a P W Maximum Power Dissipation D T = 85 C 1.4 0.69 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 38 48 a R Maximum Junction-to-Ambient thJA Steady State 77 94 C/W R Maximum Junction-to-Case (Drain) Steady State 4.3 5.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73128 www.vishay.com S09-1815-Rev. F, 14-Sep-09 1Si7212DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.6 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 6.8 A 0.030 0.036 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.6 A 0.032 0.039 GS D a g V = 10 V, I = 6.8 A 20 S Forward Transconductance fs DS D a V I = 2.2 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 711 g Q V = 15 V, V = 4.5 V, I = 6.8 A Gate-Source Charge 2 nC gs DS GS D Gate-Drain Charge Q 1.7 gd R Gate Resistance f = 1 MHz 0.6 3.0 4.5 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 15 V, R = 15 12 20 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 30 45 ns D GEN g d(off) t Fall Time 10 15 f Source-Drain Reverse Recovery Time t I = 2.2 A, dI/dt = 100 A/s 15 30 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 10 V thru 3 V GS 16 16 12 12 8 8 T = 125 C C 2 V 4 4 25 C - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73128 2 S09-1815-Rev. F, 14-Sep-09 I - Drain Current (A) D I - Drain Current (A) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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