New Product Si7135DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0039 at V = - 10 V GS - 60 COMPLIANT 100 % R Tested - 30 78 nC g 0.0062 at V = - 4.5 V GS - 60 APPLICATIONS PowerPAK SO-8 Notebook - Load Switch S S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7135DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS a T = 25 C C - 60 a T = 70 C C - 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 31.6 b, c T = 70 C A - 25.3 A I Pulsed Drain Current - 100 DM a T = 25 C C - 60 I Continuous Source-Drain Diode Current S b, c T = 25 C A - 5.6 I Single Pulse Avalanche Current - 40 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 80 AS T = 25 C 104 C T = 70 C 66.6 C Maximum Power Dissipation P W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.9 1.2 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7135DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 31 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 6.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V = - 5 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 20 A 0.0032 0.0039 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 15 A 0.005 0.0062 GS D a g V = - 15 V, I = - 20 A 95 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 8650 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 1215 pF oss DS GS C Reverse Transfer Capacitance 1125 rss V = - 15 V, V = - 10 V, I = - 20 A 167 250 DS GS D Q Total Gate Charge g 78 120 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 20 A 27 gs DS GS D Q Gate-Drain Charge 35 gd R Gate Resistance f = 1 MHz 1.7 g t Turn-On Delay Time 25 40 d(on) t Rise Time V = - 15 V, R = 15 15 30 r DD L I - 1.0 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 110 170 d(off) Fall Time t 30 50 f ns t Turn-On Delay Time 110 170 d(on) Rise Time t 100 150 V = - 15 V, R = 15 r DD L I - 1.0 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 100 150 d(off) Fall Time t 50 75 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 60 S C A a I 100 Pulse Diode Forward Current SM Body Diode Voltage V I = - 5 A - 0.74 - 1.1 V SD S t Body Diode Reverse Recovery Time 50 100 ns rr Body Diode Reverse Recovery Charge Q 65 130 nC rr I = 3.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 26 a ns Reverse Recovery Rise Time t 24 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68807 2 S-81588-Rev. A, 07-Jul-08