X-On Electronics has gained recognition as a prominent supplier of SI7116DN-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7116DN-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7116DN-T1-E3 Vishay

SI7116DN-T1-E3 electronic component of Vishay
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Part No.SI7116DN-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
Datasheet: SI7116DN-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.585 ea
Line Total: USD 1755 
Availability - 43650
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
43650
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.585
6000 : USD 0.585
9000 : USD 0.585

1441
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3041
10 : USD 1.1815
30 : USD 1.1145
100 : USD 1.0379
500 : USD 1.0054
1000 : USD 0.9901

8336
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.486
10 : USD 1.694
100 : USD 1.265
500 : USD 1.0538
1000 : USD 1.0296
3000 : USD 0.99
6000 : USD 0.9658

   
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RoHS - XON
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Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
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Tradename
Configuration
Series
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7116DN-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7116DN-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si7116DN Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET 0.0078 at V = 10 V RoHS 16.4 GS 40 15 nC New Low Thermal Resistance PowerPAK COMPLIANT 0.010 at V = 4.5 V 14.5 GS Package with Low 1.07 mm Profile PWM Optimized 100 % R Tested g PowerPAK 1212-8 APPLICATIONS Synchronous Rectification Intermediate Switch S 3.30 mm 3.30 mm 1 S Synchronous Buck 2 S 3 D G 4 D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7116DN-T1-E3 (Lead (Pb)-free) Si7116DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 40 DS V V Gate-Source Voltage 20 GS T = 25 C 16.4 10.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 13.1 8.4 A I Pulsed Drain Current 60 DM A a I 3.2 1.3 Continuous Source Current (Diode Conduction) S I Avalanche Current 15 AS L = 0 1 mH Avalanche Energy E 11 mJ AS T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.0 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 24 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7116DN Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.5 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 16.4 A 0.0065 0.0078 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 14.5 A 0.0083 0.010 GS D a g V = 15 V, I = 16.4 A 68 S Forward Transconductance fs DS D a V I = 3.2 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 15 23 g Q V = 20 V, V = 4.5 V, I = 16.4 A Gate-Source Charge 6.7 nC gs DS GS D Gate-Drain Charge Q 5.1 gd R Gate Resistance f = 1 MHz 0.7 1.4 2.1 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 20 V, R = 20 10 15 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 36 55 ns D GEN g d(off) t Fall Time 10 15 f Source-Drain Reverse Recovery Time t I = 3.2 A, di/dt = 100 A/s 30 60 rr F Q I = 3.2 A, di/dt = 100 A/s Body Diode Reverse Recovery Charge 26 52 nc rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 thru 4 V GS 50 50 40 40 30 30 20 20 T = 125 C C 10 10 25 C 3 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73139 2 S-80581-Rev. D, 17-Mar-08 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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