Si7149ADP Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g Low On-Resistance for Low Voltage Drop d Extended V max. Rating: 25 V 0.0052 at V = - 10 V GS - 50 GS - 30 43.1 nC 100 % R and UIS Tested d g 0.0095 at V = - 4.5 V - 50 GS Material categorization: For definitions of compliance PowerPAK SO-8 please see www.vishay.com/doc 99912 APPLICATIONS S 6.15 mm 5.15 mm S 1 S Battery, Load and Adaptor Switches 2 S - Notebook Computers 3 G - Notebook Battery Packs 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: P-Channel MOSFET Si7149ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 25 GS d T = 25 C - 50 C d T = 70 C - 50 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 23.1 A a, b T = 70 C - 18.4 A A I - 300 Pulsed Drain Current (t = 100 s) DM d T = 25 C - 50 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 4.1 A I Avalanche Current - 25 AS L = 0.1 mH E Single-Pulse Avalanche Energy 31.2 mJ AS T = 25 C 48 C T = 70 C 31 C P Maximum Power Dissipation W D a, b T = 25 C 5 A a, b T = 70 C 3.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 21 25 thJA C/W R Maximum Junction-to-Case Steady State 2.1 2.6 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 70 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. For technical questions, contact: pmostechsupport vishay.com Document Number: 62839 www.vishay.com S13-1158-Rev. A, 13-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7149ADP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 22 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.1 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.2 - 2.5 V GS(th) DS GS D I V = 0 V, V = 25 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0042 0.0052 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0076 0.0095 GS D a g V = - 10 V, I = - 15 A 60 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5125 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 615 pF oss DS GS C Reverse Transfer Capacitance 554 rss V = - 15 V, V = - 10 V, I = - 10 A 90 135 DS GS D Q Total Gate Charge g 43.1 65 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 10 A 13.6 gs DS GS D Q Gate-Drain Charge 28.8 gd Gate Resistance R f = 1 MHz 0.5 2.4 4.8 g t Turn-On Delay Time 15 30 d(on) Rise Time t 12 24 V = - 15 V, R = 1.5 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off DelayTime D GEN g 58 110 d(off) Fall Time t 12 24 f ns t Turn-On Delay Time 60 120 d(on) Rise Time t 60 120 r V = - 15 V, R = 1.5 DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off DelayTime D GEN g 52 100 d(off) t Fall Time 26 52 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 50 S C A Pulse Diode Forward Current (100 s) I - 300 SM Body Diode Voltage V I = - 3 A, V = 0 - 0.74 - 1.20 V SD S GS Body Diode Reverse Recovery Time t 23 46 ns rr Body Diode Reverse Recovery Charge Q 12 24 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For technical questions, contact: pmostechsupport vishay.com www.vishay.com Document Number: 62839 2 S13-1158-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000