New Product Si7149DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET d 0.0052 at V = - 10 V - 50 GS 100% R Tested g - 30 51 nC d 0.0094 at V = - 4.5 V - 50 100% UIS Tested GS PowerPAK SO-8 APPLICATIONS Battery and Load Switching S - Notebook Computers S 6.15 mm 5.15 mm 1 - Notebook Battery Packs S 2 S 3 G G 4 D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7149DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 25 GS d T = 25 C - 50 C d T = 70 C - 50 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 23.7 A a, b T = 70 C - 18.7 A A I - 70 Pulsed Drain Current DM d T = 25 C - 50 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 4.3 A I Avalanche Current - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 69 C T = 70 C 44.4 C P Maximum Power Dissipation W D a, b T = 25 C 5.2 A a, b T = 70 C 3.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 19 24 thJA C/W R Maximum Junction-to-Case Steady State 1.2 1.8 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 65 C/W. d. Package limited. e. See Solder Profile (New Product Si7149DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 32 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 6.0 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.2 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 25 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0042 0.0052 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0075 0.0094 GS D a g V = - 10 V, I = - 15 A 47 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4590 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 795 pF oss DS GS C Reverse Transfer Capacitance 765 rss V = - 15 V, V = - 10 V, I = - 10 A 98 147 DS GS D Q Total Gate Charge g 51 77 nC Q V = - 15 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 11.7 gs DS GS D Q Gate-Drain Charge 25 gd R Gate Resistance f = 1 MHz 0.4 2.0 4.0 g t Turn-On Delay Time 15 30 d(on) t V = - 15 V, R = 1.5 Rise Time 14 28 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 58 110 d(off) D GEN g t Fall Time 16 32 f ns t Turn-On Delay Time 79 140 d(on) t V = - 15 V, R = 1.5 Rise Time 135 220 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 52 100 d(off) D GEN g t Fall Time 36 70 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 50 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.72 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 49 90 ns rr Body Diode Reverse Recovery Charge Q 47 86 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 22 a ns Reverse Recovery Rise Time t 27 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68934 2 S-82620-Rev. A, 03-Nov-08