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X-On Electronics has gained recognition as a prominent supplier of SI7149DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7149DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7149DP-T1-GE3 Vishay

Hot SI7149DP-T1-GE3 electronic component of Vishay
SI7149DP-T1-GE3 Vishay
SI7149DP-T1-GE3 MOSFETs
SI7149DP-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI7149DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 30 V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8
Datasheet: SI7149DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2418 ea
Line Total: USD 1.24 
Availability - 298
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
298
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 1.2418
10 : USD 0.9748
30 : USD 0.7232
100 : USD 0.5478
500 : USD 0.4867
1000 : USD 0.4562

8017
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 2.15
10 : USD 1.392
100 : USD 0.9889
500 : USD 0.8096
1000 : USD 0.7458
3000 : USD 0.7216
6000 : USD 0.7007

2910
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.8727

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI7149DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7149DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si7149DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET d 0.0052 at V = - 10 V - 50 GS 100% R Tested g - 30 51 nC d 0.0094 at V = - 4.5 V - 50 100% UIS Tested GS PowerPAK SO-8 APPLICATIONS Battery and Load Switching S - Notebook Computers S 6.15 mm 5.15 mm 1 - Notebook Battery Packs S 2 S 3 G G 4 D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7149DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 25 GS d T = 25 C - 50 C d T = 70 C - 50 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 23.7 A a, b T = 70 C - 18.7 A A I - 70 Pulsed Drain Current DM d T = 25 C - 50 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 4.3 A I Avalanche Current - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 69 C T = 70 C 44.4 C P Maximum Power Dissipation W D a, b T = 25 C 5.2 A a, b T = 70 C 3.3 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 19 24 thJA C/W R Maximum Junction-to-Case Steady State 1.2 1.8 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 65 C/W. d. Package limited. e. See Solder Profile (New Product Si7149DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 32 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 6.0 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.2 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 25 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 15 A 0.0042 0.0052 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10 A 0.0075 0.0094 GS D a g V = - 10 V, I = - 15 A 47 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4590 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 795 pF oss DS GS C Reverse Transfer Capacitance 765 rss V = - 15 V, V = - 10 V, I = - 10 A 98 147 DS GS D Q Total Gate Charge g 51 77 nC Q V = - 15 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 11.7 gs DS GS D Q Gate-Drain Charge 25 gd R Gate Resistance f = 1 MHz 0.4 2.0 4.0 g t Turn-On Delay Time 15 30 d(on) t V = - 15 V, R = 1.5 Rise Time 14 28 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 58 110 d(off) D GEN g t Fall Time 16 32 f ns t Turn-On Delay Time 79 140 d(on) t V = - 15 V, R = 1.5 Rise Time 135 220 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 52 100 d(off) D GEN g t Fall Time 36 70 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 50 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.72 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 49 90 ns rr Body Diode Reverse Recovery Charge Q 47 86 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 22 a ns Reverse Recovery Rise Time t 27 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68934 2 S-82620-Rev. A, 03-Nov-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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