6.15 mm
Si7172DP
www.vishay.com
Vishay Siliconix
N-Channel 200 V (D-S) MOSFET
FEATURES
PowerPAK SO-8 Single
D
TrenchFET power MOSFET
D
8
D 7
Low thermal resistance PowerPAK package
D 6
5
100 % R and UIS tested
g
Material categorization:
for definitions of compliance please see
1
www.vishay.com/doc?99912
2 S
3 S
4 S
1
APPLICATIONS
D
G
Top View Bottom View
Primary side switch
PRODUCT SUMMARY
Industrial
V (V) 200
DS
G
R max. ( ) at V = 10 V 0.070
DS(on) GS
R max. ( ) at V = 6 V 0.076
DS(on) GS
Q typ. (nC) 34
g
S
g
I (A) 25
D
N-Channel MOSFET
Configuration Single
ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free and halogen-free Si7172DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
A
PARAMETER SYMBOL LIMITUNIT
Drain-source voltage V 200
DS
V
Gate-source voltage V 20
GS
T = 25 C 25
C
T = 70 C 20
C
Continuous drain current (T = 150 C) I
J D
b, c
T = 25 C 5.9
A
b, c
T = 70 C 4.8
A
A
Pulsed drain current I 30
DM
a
T = 25 C 30
C
Continuous source-drain diode current I
S
b, c
T = 25 C 4.5
A
Avalanche current I 15
AS
L = 0.1 mH
Single-pulse avalanche energy E 11.25 mJ
AS
T = 25 C 96
C
T = 70 C 61.5
C
Maximum power dissipation P W
D
b, c
T = 25 C 5.4
A
b, c
T = 70 C 3.5
A
Operating junction and storage temperature range T , T -55 to +150
J stg
C
d, e
Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICALMAXIMUMUNIT
b, f
Maximum junction-to-ambient t 10 s R 18 23
thJA
C/W
Maximum junction-to-case (drain) Steady State R 11.5
thJC
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 65 C/W
g. Based on T = 25 C
C
S14-0996-Rev. B, 05-May-14 Document Number: 68763
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5.15 mm
Si7172DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-source breakdown voltage V V = 0 V, I = 1 mA 200 - - V
DS GS D
V temperature coefficient V /T -207 -
DS DS J
I = 250 A mV/C
D
V temperature coefficient V /T --9.1 -
GS(th) GS(th) J
Gate-source threshold voltage V V = V , I = 250 A 2 - 4 V
GS(th) DS GS D
Gate-source leakage I V = 0 V, V = 20 V - - 100 nA
GSS DS GS
V = 200 V, V = 0 V - - 1
DS GS
Zero gate voltage drain current I A
DSS
V = 200 V, V = 0 V, T = 55 C - - 10
DS GS J
a
On-state drain current I V 5 V, V = 10 V 20 - - A
D(on) DS GS
V = 10 V, I = 5.9 A - 0.058 0.070
GS D
a
Drain-source on-state resistance R
DS(on)
V = 6 V, I = 5.7 A - 0.063 0.076
GS D
a
Forward transconductance g V = 15 V, I = 5.9 A - 19 - S
fs DS D
b
Dynamic
Input capacitance C -2250 -
iss
Output capacitance C V = 100 V, V = 0 V, f = 1 MHz -115 - pF
oss DS GS
Reverse transfer capacitance C -61 -
rss
V = 100 V, V = 10 V, I = 5.9 A - 51 77
DS GS D
Total gate charge Q
g
-34 51
nC
Gate-source charge Q V = 100 V, V = 6 V, I = 5.9 A -14 -
gs DS GS D
Gate-drain charge Q - 15.5 -
gd
Gate resistance R f = 1 MHz - 1 2
g
Turn-on delay time t -22 33
d(on)
Rise time t -12 18
V = 100 V, R = 20.8
r
DD L
I 4.8 A, V = 6 V, R = 1
Turn-off delay time t D GEN g -24 36
d(off)
Fall time t -10 20
f
ns
Turn-on delay time t -15 23
d(on)
Rise time t -11 20
V = 100 V, R = 20.8
r
DD L
I 4.8 A, V = 10 V, R = 1
Turn-off delay time t D GEN g -26 39
d(off)
Fall time t -9 18
f
Drain-Source Body Diode Characteristics
T = 25 C
Continuous source-drain diode current I -- 30
S C
A
a
Pulse diode forward current I -- 30
SM
I = 4.8 A
Body diode voltage V -0.8 1.2 V
SD S
Body diode reverse recovery time t - 80 120 ns
rr
Body diode reverse recovery charge Q - 275 413 nC
rr I = 4.8 A, di/dt = 100 A/s,
F
T = 25 C
Reverse recovery fall time t J -60 -
a
ns
Reverse recovery rise time t -20 -
b
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0996-Rev. B, 05-May-14 Document Number: 68763
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000