6.15 mm Si7454DP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET power MOSFETs D 8 New low thermal resistance PowerPAK D 7 package with low 1.07 mm profile D 6 5 PWM optimized for fast switching 100 % R tested g Material categorization: Available for definitions of compliance please see 1 www.vishay.com/doc 99912 2 S 3 S 4 S APPLICATIONS 1 G Primary side switch for high density DC/DC Top View Bottom View Telecom / server 48 V, full- / half-bridge DC/DC Industrial and 42 V automotive D PRODUCT SUMMARY V (V) 100 DS R max. ( ) at V = 10 V 0.034 DS(on) GS R max. ( ) at V = 6 V 0.040 DS(on) GS G Q typ. (nC) 24 g I (A) 7.8 D Configuration Single N-Channel MOSFET S ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free Si7454DP-T1-E3 Lead (Pb)-free and halogen-free Si7454DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-source voltage V 100 100 DS V Gate-source voltage V 20 20 GS T = 25 C 7.8 5 A a Continuous drain current (T = 150 C) I J D T = 85 C 5.7 3.6 A A Pulsed drain current I 30 30 DM Avalanche current I 25 25 AS L = 0.1 mH Single avalanche energy (duty cycle 1 %) E 31 31 mJ AS a Continuous source current (diode conduction) I 41.6 A S T = 25 C 4.8 1.9 A a Maximum power dissipation P W D T = 85 C 2.6 1 A Operating junction and storage temperature range T , T -55 to +150 J stg C b, c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 10 s 21 26 a Maximum junction-to-ambient R thJA Steady state 55 65 C/W Maximum junction-to-case (drain) Steady state R 1.6 2 thJC Notes a. Surface mounted on 1 x 1 FR4 board b. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S09-0227-Rev. D, 09-Feb-09 Document Number: 71618 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mm Si7454DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Gate threshold voltage V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 100 V, V = 0 V, T = 85 C - - 20 DS GS J a On-state drain current I V 5 V, V = 10 V 30 - - A D(on) DS GS V = 10 V, I = 7.8 A - 0.028 0.034 GS D a Drain-source on-state resistance R DS(on) V = 6 V, I = 7.2 A - 0.032 0.040 GS D a Forward transconductance g V = 15 V, I = 7.8 A - 25 - S fs DS D a Diode forward voltage V I = 4 A, V = 0 V - 0.8 1.2 V SD S GS b Dynamic Total gate charge Q -24 30 g Gate-source charge Q V = 50 V, V = 10 V, I = 7.8 A -7.6 - nC gs DS GS D Gate-drain charge Q -5.4 - gd Gate resistance R 0.5 1.25 2.2 g Turn-on delay time t -16 30 d(on) Rise time t -10 20 r V = 50 V, R = 50 DD L I 1 A, V = 10 V, R = 6 D GEN g Turn-off delay time t -35 70 ns d(off) Fall time t -20 40 f Source-drain reverse recovery time t I = 4 A, di/dt = 100 A/s - 50 80 rr F Notes a. Pulse test: pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-0227-Rev. D, 09-Feb-09 Document Number: 71618 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000