Si7726DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free e V (V) R () Q (Typ.) I (A) DS DS(on) g D SkyFET Monolithic TrenchFET Power RoHS 0.0095 at V = 10 V 35 GS MOSFET and Schottky Diode COMPLIANT 30 12.5 nC 0.0125 at V = 4.5 V 35 GS Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile 100 % R Tested g PowerPAK 1212-8 APPLICATIONS DC/DC Converter - Notebook S 3.30 mm 3.30 mm 1 S - POL 2 S D 3 G 4 D 8 D 7 D 6 D Schottky Diode 5 G Bottom View N-Channel MOSFET Ordering Information: Si7726DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS e T = 25 C 35 C e T = 70 C C 35 Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 14.9 a, b T = 70 C A 11.8 A I Pulsed Drain Current 60 DM e T = 25 C 35 C Continuous Source-Drain Diode Current I S a, b T = 25 C A 5.4 Single Pulse Avalanche Current I 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 20 mJ AS T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.8 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (Si7726DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b t 10 s R 24 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 81 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 30 V DS GS D V V = V , I = 250 A Gate-Source Threshold Voltage 1.4 2.6 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 0.016 0.15 DS GS I Zero Gate Voltage Drain Current mA DSS V = 30 V, V = 0 V, T = 100 C 1.6 15 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0077 0.0095 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.010 0.0125 GS D a g V = 10 V, I = 10 A 40 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1765 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 300 pF oss DS GS C Reverse Transfer Capacitance 100 rss V = 15 V, V = 10 V, I = 10 A 28.5 43 DS GS D Q Total Gate Charge g 12.5 19 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 4.8 gs DS GS D Q Gate-Drain Charge 3.2 gd R Gate Resistance f = 1 MHz 0.25 1.25 2.5 g Turn-On Delay Time t 23 40 d(on) t Rise Time V = 15 V, R = 3 10 20 r DD L I 5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 27 50 D GEN g d(off) t Fall Time 14 18 f ns Turn-On Delay Time t 10 20 d(on) t Rise Time V = 15 V, R = 3 816 r DD L I 5 A, V = 10 V, R = 1 Turn-Off Delay Time t 22 40 D GEN g d(off) t Fall Time 816 f www.vishay.com Document Number: 68600 2 S-81737-Rev. B, 04-Aug-08