Si9435BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.042 at V = - 10 V - 5.7 GS TrenchFET Power MOSFET - 30 0.055 at V = - 6 V - 5.0 GS Compliant to RoHS Directive 2002/95/EC 0.070 at V = - 4.5 V - 4.4 GS SO-8 S SD 1 8 S D 2 7 G SD3 6 G D 4 5 Top View D Ordering Information: Si9435BDY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si9435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit V Drain-Source Voltage - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 5.7 - 4.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.6 - 3.2 A A I Pulsed Drain Current - 30 DM a I - 2.3 - 1.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.3 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 40 50 a R Maximum Junction-to-Ambient thJA Steady State 70 95 C/W Maximum Junction-to-Foot (Drain) Steady State R 24 30 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72245 www.vishay.com S09-0870-Rev. D, 18-May-09 1Si9435BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 70 C - 5 DS GS J V - 10 V, V = - 10 V - 20 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V - 5 DS GS V = - 10 V, I = - 5.7 A 0.033 0.042 GS D b R V = - 6 V, I = - 5 A 0.043 0.055 Drain-Source On-State Resistance DS(on) GS D V = - 4.5 V, I = - 4.4 A 0.056 0.070 GS D b g V = - 15 V, I = - 5.7 A 13 S Forward Transconductance fs DS D b V I = - 2.3 A, V = 0 V - 0.8 - 1.1 V Diode Forward Voltage SD S GS a Dynamic Q Total Gate Charge 16 24 g Gate-Source Charge Q V = - 15 V, V = - 10 V, I = - 3.5 A 2.3 nC gs DS GS D Q Gate-Drain Charge 4.5 gd R Gate Resistance 8.8 g t Turn-On Delay Time 14 25 d(on) t Rise Time V = - 15 V, R = 15 14 25 r DD L I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN g 42 70 ns d(off) t Fall Time 30 50 f t I = - 1.2 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 30 60 rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72245 2 S09-0870-Rev. D, 18-May-09
